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A spectroscopic charge pumping model in spice for the low dimensional MOSFET's
Published online by Cambridge University Press: 15 January 2002
Abstract
We have simulated the experimental spectroscopic charge pumping technique by the implementation of a model in the electrical simulator SPICE3F4. This model takes into account the temperature effect on the geometrical and electrical parameters of the studied transistor. The simulated results are in a good agreement with recent and different experimental results.
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- © EDP Sciences, 2002