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Surface passivation of composition graded base in GaAlAs/GaInP/GaAsheterojunction bipolar transistor

Published online by Cambridge University Press:  15 June 1999

R. Bourguiga ,
H. Sik  and
A. Scavennec
R. Bourguiga
Affiliation:
Faculté des Sciences de Bizerte, 7021 Zarzouna-Bizerte, Tunisia
H. Sik
Affiliation:
France Télécom, Centre National d'Études des Télécommunications, Paris B, Laboratoire de Bagneux, 196 avenue Henri Ravera, B.P. 107, 92225 Bagneux Cedex, France
A. Scavennec
Affiliation:
France Télécom, Centre National d'Études des Télécommunications, Paris B, Laboratoire de Bagneux, 196 avenue Henri Ravera, B.P. 107, 92225 Bagneux Cedex, France
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Abstract

A comparative study on the emitter-base recombination current in different GaAlAs/GaInP/GaAs HBT structures including uniform base HBTs, and composition graded base HBTs, has been carried out. We have demonstrated that a graded base is not sufficient to prevent recombination on the base surface and that a thin GaInP ledge on the base surface reMayns necessary to retain a high enough current gain for small emitter high-frequency devices.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 6 , Issue 3 , June 1999 , pp. 299 - 301
Copyright
© EDP Sciences, 1999

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References

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