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Time-resolved studies of short pulse laser-produced plasmasin silicon dioxide near breakdown threshold

Published online by Cambridge University Press:  15 February 1999

C. Quoix
Affiliation:
Laboratoire d'Optique Appliquée (LOA) (UMR 7639 CNRS), École Polytechnique, ENSTA, rue de la Hunière, 91167 Palaiseau, France
G. Grillon
Affiliation:
Laboratoire d'Optique Appliquée (LOA) (UMR 7639 CNRS), École Polytechnique, ENSTA, rue de la Hunière, 91167 Palaiseau, France
A. Antonetti
Affiliation:
Laboratoire d'Optique Appliquée (LOA) (UMR 7639 CNRS), École Polytechnique, ENSTA, rue de la Hunière, 91167 Palaiseau, France
J.-P. Geindre
Affiliation:
Laboratoire pour l'Utilisation des Lasers Intenses (LULI) (UMR 7605 CNRS), École Polytechnique, CEA, Université Paris VI, 91128 Palaiseau, France
P. Audebert
Affiliation:
Laboratoire pour l'Utilisation des Lasers Intenses (LULI) (UMR 7605 CNRS), École Polytechnique, CEA, Université Paris VI, 91128 Palaiseau, France
J.-C. Gauthier
Affiliation:
Laboratoire pour l'Utilisation des Lasers Intenses (LULI) (UMR 7605 CNRS), École Polytechnique, CEA, Université Paris VI, 91128 Palaiseau, France
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Abstract

Using the technique of frequency-domain interferometry, we demonstrate a new way of studying laser-induced breakdown at the surface of dielectric materials. A theoretical model based on electron production by multiphoton ionisation, inverse bremsstrahlung heating, and collisional ionisation is in quantitative agreement with both the detailed time variation of the dielectric constant and the pulse width variation of the fluence threshold. From the complex reflection coefficient measured with the two probe pulse polarisations in quadrature, we deduce the time variation of the dielectric constant of silica during breakdown.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 1999

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