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Microstructure of Pvd Al Deposition on CVD Tin

Published online by Cambridge University Press:  02 July 2020

Na Zhang ,
Mark McNicholas ,
Bob Anderhalt ,
Evan Slow  and
Neil Colvin
Na Zhang
Affiliation:
EDAX International, 91 McKee Drive, NJ, 07430
Mark McNicholas
Affiliation:
Materials Research Corporation, 560 Route 303, Orangeburg, NY10962
Bob Anderhalt
Affiliation:
EDAX International, 91 McKee Drive, NJ, 07430
Evan Slow
Affiliation:
EDAX International, 91 McKee Drive, NJ, 07430
Neil Colvin
Affiliation:
Materials Research Corporation, 560 Route 303, Orangeburg, NY10962
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Extract

CVD TiN films offer promise as a barrier to Al deposition as a result of the improved conformai step coverage of this film in 0.25 μm contact holes. As an underlayer, the TiN performs a secondary role by improving electromigration (EM) resistance. This is a result of the crystal orientation of the TiN film and its influence on the orientation of the subsequent Al layer. A <111>Al orientation shows improved EM resistance; however, CVD TiN has a preferred <200> orientation as opposed to a <111>PVD TiN orientation.

In this study, two parts were investigated: 1) obtain a qualified PVD Al film on a CVD <200> TiN barrier in terms of sheet resistance and reflectivity utilizing MRC's Eclipse™ Mark II PVD system; 2) examine the texture of the Al film utilizing Philips XL30 SEM equipped with EDAX-DX4 EDS system and Electron Back Scatter Pattern (EBSP) system.

Type
Recent Developments in Microscopy for Studying Electronic and Magnetic Materials
Information
Microscopy and Microanalysis , Volume 3 , Issue S2: Proceedings: Microscopy & Microanalysis '97, Microscopy Society of America 55th Annual Meeting, Microbeam Analysis Society 31st Annual Meeting, Histochemical Society 48th Annual Meeting, Cleveland, Ohio, August 10-14, 1997 , August 1997 , pp. 493 - 494
Copyright
Copyright © Microscopy Society of America 1997

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References

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