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Nanostructure origin of leakage current in GaN/InGaN lighting emitting diode using patterned sapphire substrate

Published online by Cambridge University Press:  03 August 2008

Y-J Yoon ,
B-K Kim  and
M Kim
Y-J Yoon
Affiliation:
Samsung Electro-Mechanics Co, Republic of Korea
B-K Kim
Affiliation:
Samsung Electro-Mechanics Co, Republic of Korea
M Kim
Affiliation:
Samsung Electro-Mechanics Co, Republic of Korea
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Extract

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

Type
Research Article
Information
Microscopy and Microanalysis , Volume 14 , Supplement S2 , August 2008 , pp. 634 - 635
Copyright
© 2008 Microscopy Society of America

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