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Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)
Published online by Cambridge University Press: 16 February 2011
Abstract
This paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).
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- Research Article
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- Copyright © Materials Research Society 1991
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