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1 - Introduction to Electromigration

Published online by Cambridge University Press:  05 May 2022

Paul S. Ho
Affiliation:
University of Texas, Austin
Chao-Kun Hu
Affiliation:
IBM T J Watson Research Center, New York
Martin Gall
Affiliation:
GlobalFoundries
Valeriy Sukharev
Affiliation:
Siemens Business
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Summary

This chapter provides an overview of electromigration in metals, starting from the early studies on bulk metals to the current studies on copper interconnects. Asmicroelectronics technology advances, electromigration becomes an important reliability problem for on-chip interconnects, evolving from the microscale to the nanoscale in copper lines. Key concepts are introduced, including the electron wind force, the Blech short-length effects, and copper damascene interconnects.

Type
Chapter
Information
Electromigration in Metals
Fundamentals to Nano-Interconnects
, pp. 1 - 7
Publisher: Cambridge University Press
Print publication year: 2022

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References

Gerardin, M., Compt. rend. 53 (1861), 727.Google Scholar
Seith, W. and Wever, H., Z. Elecktrochem. 59 (1953), 891900.Google Scholar
Skaupy, F., Verhandl. Deut. Physik. Ges. 16 (1914), 156.Google Scholar
Seith, W. and Wever, H., Z. Elecktrochem. 59 (1955), 942.Google Scholar
Fiks, V. B., Forces produced by conduction electrons in metals located in external fields, Soviet Physics–Solid State 1 (1959), 14.Google Scholar
Huntington, H. B. and Grone, A. R., Current-induced marker motion in gold wires, Journal of Physics and Chemistry of Solids 20 (1961), 7681.Google Scholar
Bosvieux, C. and Friedel, J., Sur l’electrolyse des alliages metalliques, Journal of Physics and Chemistry of Solids 23 (1962), 123136.Google Scholar
Verbruggen, A. H., Unpublished PhD thesis, Free University of Amsterdam (1985).Google Scholar
Sorbello, R. S., Theory of the direct force in electromigration, Physical Review B 31 (1985), 798.CrossRefGoogle ScholarPubMed
Huntington, H. B., Electromigration in metals. Diffusion in Solids: Recent Developments, ed. Nowick, A. S. and Burton, J. J. (New York: AIME, 1974), 303352.Google Scholar
Rigney, D. A., Electromigration in alloys and liquid metals. Diffusion in Solids: Recent Developments, ed. Nowick, A. S. and Burton, J. J. (New York: AIME, 1974), 140159.Google Scholar
Peterson, D. T., Electromigration of hydrogen, deuterium in vanadium, niobium and tantalum. Electro- and Thermo-Transport in Metals, ed. Hummel, R. E. and Huntington, H. B. (New York: AIME, 1977), 5467.Google Scholar
Blech, I. A. and Sello, H., The failure of thin aluminum current carrying strips on oxidized Silicon, Fifth Annual Symposium on the Physics of Failure in Electronics, (1966), 496505.Google Scholar
Ho, P. S., Proceedings of the 20th IEEE Symposium on Reliability in Physics (New York: IEEE, 1982), 284.Google Scholar
d’Heurle, F. M. and Rosenberg, R., Physics of Thin Films 7 (New York: Academic Press, 1972), 257.Google Scholar
d’Heurle, F. M. and Ho, P. S., Electromigration in metals. Thin Films: Interdifusion and Reactions, ed. Poate, J. M. et al. (New York: Wiley-Interscience, 1978), 183.Google Scholar
Ho, P. S., d’Heurle, F. M., and Gangulee, A., Implications of electromigration on device reliability. Electro- and Thermo-Transport in Metals and Alloys, ed. Hummel, R. E. and Huntington, H. B. (New York: AIME, 1977), 108139.Google Scholar
Moore, G. E.. Cramming more components onto integrated circuits, Electronics 38 (8) (1965), 114118.Google Scholar
Blech, I. A. and Kinsbron, E., Electromigration in thin gold films on molybdenum surfaces, Thin Solid Films 25 (1975), 327334.Google Scholar
Blech, I. A., Electromigration in thin aluminum films on titanium nitride, Journal of Applied Physics 47 (1976) 12031208.Google Scholar
Blech, I. A. and Tai, K. L., Measurement of stress gradients generated by electromigration, Applied Physics Letters 30 (1977), 387.Google Scholar
Klema, J., Pyle, R., and Domangue, E., Reliability implications of nitrogen contamination during deposition of sputtered aluminum/silicon metal films, IEEE Proceedings International. Reliability Physics Symposium 22 (1984), 15.Google Scholar
Curry, J., Fitzgibbon, G., Guan, Y., Muollo, R., Nelson, G., and Thomas, A., New failure mechanisms in sputtered aluminum-silicon films, IEEE Proceedings of the International Reliability Physics Symposium 22 (1984), 610.Google Scholar
Korhonen, M. A., Borgesen, P., and Li, Che-Yu, Mechanisms of stress-induced and electromigration-induced damage in passivated narrow metallization on rigid substrates, Materials Research Society Bulletin 17 (1992), 6169.Google Scholar
Korhonen, M. A., Black, R. D., and Li, C-Y., Stress relaxation of passivated aluminum line metallizations on silicon substrates, Journal of Applied. Physics 69 (1991), 1748.Google Scholar
Howard, J. K., White, J. F., and Ho, P. S., Intermetallic compounds of Al and transitions metals: effect of electromigration in 1–2‐μm‐wide lines, Journal of Applied Physics 49 (1978), 4083.CrossRefGoogle Scholar
Gall, M., Gall, M., Capasso, C., et al., Statistical analysis of early failures in electromigration, Journal of Applied Physics 90 (2001), 732740, doi:10.1063/1.1377304.Google Scholar
Edelstein, D., .Heidenreich, J, Goldblatt, R. et al. Full copper wiring in a sub-0.25 micron CMOS ULSI technology, Tech. Dig. IEEE International Electron Devices Conference (1997), 773–776.Google Scholar
Lee, W., Leu, J., and Ho, P. S., Low dielectric constant materials for ULSI interlayer dielectric application, Materials Research Bulletin 22 (1997), 1927.Google Scholar
Rosenberg, R., Edelstein, D. C., Hu, C.-K., and Rodbell, K. P., Copper metallization for high performance silicon technology, Annual Review of. Materials Science 30 (2000), 229262.Google Scholar
Lane, M. W., Liniger, E. G., and Lloyd, J. R., Relationship between interfacial adhesion and electromigration in Cu metallization, Journal of Applied Physics 93 (2003) 1417.Google Scholar
Hu, C. K., Rosenberg, R., and Lee, K. Y., Electromigration path in Cu thin film lines, Applied Physics Letters 74 (1999), 2945.CrossRefGoogle Scholar
Hu, C. K., Gignac, L., Rosenberg, R., et al., Reduced electromigration of Cu wires by surface coating, Applied Physics Letters 81 (2002), 1782.Google Scholar
Hu, C. K., Ohm, J., Gignac, L. M. et al., Electromigration in Cu(Al) and Cu(Mn) damascene lines, Journal of Applied Physics 111 (2012), 093722.Google Scholar
Sukharev, V., Zschech, E., and Nix, W. D., A model for electromigration- induced degradation mechanisms in dual-inlaid copper interconnects: Effect of microstructure, Journal of Applied Physics 102 (2007), 053505.Google Scholar
Gleixner, R. J. and Nix, W. D., A physically based model for electromigration and stress-induced void formation in microelectronic interconnects, Journal of Applied Physics 86 (1999), 19321944.Google Scholar
Volinsky, A., Hauschildt, M., Vella, J. B., et al., Residual stress and microstructure of electroplated Cu films on different barrier layers, Materials Research Society Symposium Proceedings 695 (2001): https://doi.org/10.1557/PROC-695-L1.11.1.Google Scholar
Oates, A. S., Strategies to ensure electromigration reliability of Cu/Low-k interconnects at 10 nm, ECS Journal of Solid State Science and Technology 4 (2015), N3168N3176.CrossRefGoogle Scholar
Ganesh, K. J., Darbal, A. D., Rajasekhara, S., et al., Effect of downscaling nano-copper interconnects on the microstructure revealed by high resolution TEM-orientation-mapping, Nanotechnology 23 (2012), 135702.Google Scholar
Cao, L., Zhang, L., Ho, P. S., Justison, P., and Hauschildt, M., Scaling effects on microstructure and electromigration reliability for Cu and Cu(Mn) interconnects, 2014 IEEE International Reliability Physics Symposium, Waikoloa, HI. (2014), 5A.5.1–5.5.CrossRefGoogle Scholar
Croes, K., Adelmann, C., Wilson, C. J., et al., Interconnect metals beyond copper: reliability challenges and opportunities, 2018 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA (2018), 5.3.1–5.3.4, doi: 10.1109/IEDM.2018.8614695.Google Scholar
Gall, D., The search for the most conductive metal for narrow interconnect lines, Journal of Applied Physics 127 (2020), 050901.CrossRefGoogle Scholar

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