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21 - Fracturing rates

Published online by Cambridge University Press:  14 August 2009

John J. Gilman
Affiliation:
University of California, Los Angeles
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Summary

Introduction

Most fracture is athermal, either because it occurs at low temperatures, or because it occurs too fast for thermal activation to be effective. Thus it must be directly activated by applied stresses. This can occur via quantum tunneling when the chemical bonding resides in localized (covalent) bonds. Then applied stresses can cause the bonding electrons to become delocalized (anti-bonded) through quantum tunneling. That is, the bonds become broken. The process is related to the Zener tunneling process that accounts for dielectric breakdown in semiconductors. Under a driving force, bonding electrons tunnel at constant energy from their bonding states into anti-bonding states. They pass through the forbidden gap in the bonding energy spectrum.

Thermal activation

At elevated temperatures, the process known as stress-rupture occurs. It is a result of thermally activated vacancy motion. It will not be discussed in detail here. In order for atoms to move from one atomic site in a crystal to another, the temperature must be relatively high, usually above the Debye temperature where the vibrations of individual atoms are excited, and vacancies can be thermally generated. The relatively large masses of atoms prevent much activity at lower temperatures.

The mass of an electron is 1/2000 times smaller than the mass of the smallest atomic nucleus, the proton. It is about 1/20 000 times lighter than a carbon atom, and 1/200 000 times lighter than a molybdenum atom.

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Publisher: Cambridge University Press
Print publication year: 2003

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References

Bell, R. P. (1980). The Tunnel Effect in Chemistry. London: Chapman & Hall
Crist, B. (1995). Annu. Rev. Mater. Sci., 25, 295CrossRef
Doremus, R. H. (1994). Glass Science, 2nd edn., p. 178. New York: Wiley
Gilman, J. J. and Tong, H. C. (1971). Quantum tunneling as an elementary fracture process, J. Appl. Phys., 42, 3479CrossRefGoogle Scholar
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Ridley, R. K. (1999). Quantum Processes in Semiconductors, 4th edn., p. 50. Oxford: Oxford Science Publications
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Zener, C. (1934). A theory of the electrical breakdown of solid dielectrics, Proc. R. Soc. London, 145, 523CrossRefGoogle Scholar
Zhurkov, S. N. and Tomashevskii, E. E. (1966). In Physical Basis of Yield and Fracture, Institute of Physics, Conf. Ser. 1, p. 200. Oxford: Institute of Physics

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  • Fracturing rates
  • John J. Gilman, University of California, Los Angeles
  • Book: Electronic Basis of the Strength of Materials
  • Online publication: 14 August 2009
  • Chapter DOI: https://doi.org/10.1017/CBO9780511541247.023
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  • Fracturing rates
  • John J. Gilman, University of California, Los Angeles
  • Book: Electronic Basis of the Strength of Materials
  • Online publication: 14 August 2009
  • Chapter DOI: https://doi.org/10.1017/CBO9780511541247.023
Available formats
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Save book to Google Drive

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Google Drive.

  • Fracturing rates
  • John J. Gilman, University of California, Los Angeles
  • Book: Electronic Basis of the Strength of Materials
  • Online publication: 14 August 2009
  • Chapter DOI: https://doi.org/10.1017/CBO9780511541247.023
Available formats
×