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Measurement of the X-Ray Sensitivity of Silicon Diodes in the Energy Region 1.8 to 5.0 Kev

Published online by Cambridge University Press:  06 March 2019

Jacque J. Hohlfelder
Jacque J. Hohlfelder*
Affiliation:
Sandia Laboratories, Albuqtierque, New Mexico 87115
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Abstract

Planar, Silicon diodes have been calibrated in the energy region 1.8 to 5.0 keV using low-energy, continuous-mode x rays. The spectral energy distribution of each of six x-ray spectra used in the calibration was measured using a non-dispersive Si(Li) x-ray spectrometer. X-ray spectral fluxes were measured using a xenon-filled, parallel-plate ionization chamber. A chopper-wheel and phase-sensitive detector combination was used to enhance the signal- to-noise of the silicon diode signals in order to measure the x-ray induced diode currents, ∼10-10) A., in the presence of diode dark currents of order, 10-5 A. Measured data were consistent with diode silicon dead layers of from 0.3 to 0.4 μm. Average agreement to within five percent was found between measured diode sensitivities and calculated diode sensitivities. The measured diode x-ray sensitivities are compared with independently-measured diode x-ray sensitivities of similar diodes.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 17: Twenty-Second Annual Conference on Applications of X-ray Analysis, August 22-24, 1973 , 1973 , pp. 531 - 541
Copyright
Copyright © International Centre for Diffraction Data 1973

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References

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