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Electronic structure of CeAg2Ge2 studied by resonant and angle-resolved photoemission spectroscopy

Published online by Cambridge University Press:  01 March 2011

Soma Banik*
Affiliation:
Raja Ramanna Centre for Advanced Technology, Indore 452013, India
S. K. Deb
Affiliation:
Raja Ramanna Centre for Advanced Technology, Indore 452013, India
A. Chakrabarti
Affiliation:
Raja Ramanna Centre for Advanced Technology, Indore 452013, India
A. Thamizhavel
Affiliation:
Tata Institute of Fundamental Research, Mumbai 400005, India
D. M. Phase
Affiliation:
UGC-DAE Consortium for Scientific Research, Indore 452001, India
S. N. Jha
Affiliation:
Bhabha Atomic Research Center, Mumbai 400085, India
*
Email address for correspondence:soma@rrcat.gov.in
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Abstract

The electronic structure of CeAg2Ge2 single crystal has been investigated by using resonant valence band photoemission and angle-resolved photoemission spectroscopy at different photon energies. Resonant photoemission has been observed near the 4d threshold of Ce at 121 eV. The constant initial state spectra show two photoemission features having 4f character near the Fermi level that exhibits Fano-like sharp resonance profile. Experimental energy bands have been mapped from the normal-emission photoelectron spectra of CeAg2Ge2 (001) surface along the Γ–Z direction. Four photoemission features are observed to show the dispersion related to the Ce 4f states and the hybridized Ag 4d with Ge 4p states. The experimental spectra have been interpreted with the help of calculations based on full potential linear augmented plane wave method using density functional theory.

Type
Contributed paper
Copyright
Copyright © Diamond Light Source Ltd 2011

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References

REFERENCES

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