20–25 Gbit/s low-power inductor-less single-chip optical receiver and transmitter frontend in 28 nm digital CMOS
Published online by Cambridge University Press: 02 May 2017
Abstract
The design of an analog frontend including a receiver amplifier (RX) and laser diode driver (LDD) for optical communication system is described. The RX consists of a transimpedance amplifier, a limiting amplifier, and an output buffer (BUF). An offset compensation and common-mode control circuit is designed using switched-capacitor technique to save chip area, provides continuous reduction of the offset in the RX. Active-peaking methods are used to enhance the bandwidth and gain. The very low gate-oxide breakdown voltage of transistors in deep sub-micron technologies is overcome in the LDD by implementing a topology which has the amplifier placed in a floating well. It comprises a level shifter, a pre-amplifier, and the driver stage. The single-chip frontend, fabricated in a 28 nm bulk-digital complementary metal–oxide–semiconductor (CMOS) process has a total active area of 0.003 mm2, is among the smallest optical frontends. Without the BUF, which consumes 8 mW from a separate supply, the RX power consumption is 21 mW, while the LDD consumes 32 mW. Small-signal gain and bandwidth are measured. A photo diode and laser diode are bonded to the chip on a test-printed circuit board. Electro-optical measurements show an error-free detection with a bit error rate of 10−12 at 20 Gbit/s of the RX at and a 25 Gbit/s transmission of the LDD.
- Type
- Research Papers
- Information
- International Journal of Microwave and Wireless Technologies , Volume 9 , Special Issue 8: Biomedical Applications of RF/Microwave and Optics Technologies , October 2017 , pp. 1667 - 1677
- Copyright
- Copyright © Cambridge University Press and the European Microwave Association 2017
References
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