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A 31 GHz body-biased configurable power amplifier in 28 nm FD-SOI CMOS for 5 G applications

Published online by Cambridge University Press:  25 August 2020

Florent Torres Open the ORCID record for Florent Torres [Opens in a new window] ,
Eric Kerhervé ,
Andreia Cathelin  and
Magali De Matos
Florent Torres*
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38920Crolles, France IMS Laboratory, CNRS5218, University of Bordeaux, Bordeaux INP. 351 cours de la Libération, 33405Talence Cedex, France
Eric Kerhervé
Affiliation:
IMS Laboratory, CNRS5218, University of Bordeaux, Bordeaux INP. 351 cours de la Libération, 33405Talence Cedex, France
Andreia Cathelin
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38920Crolles, France
Magali De Matos
Affiliation:
IMS Laboratory, CNRS5218, University of Bordeaux, Bordeaux INP. 351 cours de la Libération, 33405Talence Cedex, France
*
Author for correspondence: Florent Torres, E-mail: florent.torres@ericsson.com
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Abstract

This paper presents a 31 GHz integrated power amplifier (PA) in 28 nm Fully Depleted Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) technology and targeting SoC implementation for 5 G applications. Fine-grain wide range power control with more than 10 dB tuning range is enabled by body biasing feature while the design improves voltage standing wave ratio (VSWR) robustness, stability and reverse isolation by using optimized 90° hybrid couplers and capacitive neutralization on both stages. Maximum power gain of 32.6 dB, PAEmax of 25.5% and Psat of 17.9 dBm are measured while robustness to industrial temperature range and process spread is demonstrated. Temperature-induced performance variation compensation, as well as amplitude-to-phase modulation (AM-PM) optimization regarding output power back-off, are achieved through body-bias node. This PA exhibits an International Technology Roadmap for Semiconductors figure of merit (ITRS FOM) of 26 925, the highest reported around 30 GHz to authors' knowledge.

Keywords

Power amplifieractive circuit
Type
IJMWT Special Issue on the 2019 National Microwave Days
Information
International Journal of Microwave and Wireless Technologies , Volume 13 , Issue 1 , February 2021 , pp. 3 - 20
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Copyright
Copyright © Cambridge University Press and the European Microwave Association 2020

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