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An 850 nm SiGe/Si HPT with a 4.12 GHz maximum optical transition frequency and 0.805A/W responsivity

Published online by Cambridge University Press:  22 October 2015

Zerihun Gedeb Tegegne ,
Carlos Viana ,
Marc D. Rosales ,
Julien Schiellein ,
Jean-Luc Polleux ,
Marjorie Grzeskowiak ,
Elodie Richalot  and
Catherine Algani
Zerihun Gedeb Tegegne*
Affiliation:
Université Paris-Est, ESYCOM (EA2552), ESIEE-Paris, UPEM, Le CNAM, 93162 Noisy-le-Grand, France. Phone: +33 145 926 699
Carlos Viana
Affiliation:
Université Paris-Est, ESYCOM (EA2552), ESIEE-Paris, UPEM, Le CNAM, 93162 Noisy-le-Grand, France. Phone: +33 145 926 699
Marc D. Rosales
Affiliation:
Université Paris-Est, ESYCOM (EA2552), ESIEE-Paris, UPEM, Le CNAM, 93162 Noisy-le-Grand, France. Phone: +33 145 926 699 University of the Philippines, Diliman, Philippines
Julien Schiellein
Affiliation:
Université Paris-Est, ESYCOM (EA2552), ESIEE-Paris, UPEM, Le CNAM, 93162 Noisy-le-Grand, France. Phone: +33 145 926 699
Jean-Luc Polleux
Affiliation:
Université Paris-Est, ESYCOM (EA2552), ESIEE-Paris, UPEM, Le CNAM, 93162 Noisy-le-Grand, France. Phone: +33 145 926 699
Marjorie Grzeskowiak
Affiliation:
Université Paris-Est, ESYCOM (EA2552), ESIEE-Paris, UPEM, Le CNAM, 93162 Noisy-le-Grand, France. Phone: +33 145 926 699
Elodie Richalot
Affiliation:
Université Paris-Est, ESYCOM (EA2552), ESIEE-Paris, UPEM, Le CNAM, 93162 Noisy-le-Grand, France. Phone: +33 145 926 699
Catherine Algani
Affiliation:
Le Cnam, ESYCOM (EA2552), Le Cnam, ESIEE-Paris, UPEM, France
*
Corresponding author: Z.G. Tegegne Email: ztzerihun0@gmail.com
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Abstract

A 10 × 10 μm2 SiGe heterojunction bipolar photo-transistor (HPT) is fabricated using a commercial technological process of 80 GHz SiGe bipolar transistors (HBT). Its technology and structure are first briefly described. Its optimal opto-microwave dynamic performance is then analyzed versus voltage biasing conditions for opto-microwave continuous wave measurements. The optimal biasing points are then chosen in order to maximize the optical transition frequency (fTopt) and the opto-microwave responsivity of the HPT. An opto-microwave scanning near-field optical microscopy (OM-SNOM) is performed using these optimum bias conditions to localize the region of the SiGe HPT with highest frequency response. The OM-SNOM results are key to extract the optical coupling of the probe to the HPT (of 32.3%) and thus the absolute responsivity of the HPT. The effect of the substrate is also observed as it limits the extraction of the intrinsic HPT performance. A maximum optical transition frequency of 4.12 GHz and an absolute low frequency opto-microwave responsivity of 0.805A/W are extracted at 850 nm.

Keywords

Microwave photonicsSi-based devices and IC technologies
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 9 , Issue 1 , February 2017 , pp. 17 - 24
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2015 

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References

REFERENCES

[1] Guillory, J. et al. : 60 GHz intermediate frequency over fiber using a passive multipoint-to-multipoint architecture, in 16th European conf. on Networks and Optical Communications, July 2011.Google Scholar
[2] Polleux, J.L.; Moutier, F.; Billabert, A.L.; Rumelhard, C.; Sönmez, E.; Schumacher, H.: A Strained SiGe layer heterojunction bipolar phototransistor for short-range opto-microwave applications, in IEEE Int. Topical Meeting on Microwave Photonics, MWP2003, Hungary, September 2003.Google Scholar
[3] Polleux, J.L.; Moutier, F.; Billabert, A.L.; Rumelhard, C.; Sönmez, E.; Schumacher, H.: An SiGe/Si heterojunction phototransistor for opto-microwave applications: modeling and first experimental results, in The GAAS Conf. of the European Microwave Week, Munich, Germany, October 2003.Google Scholar
[4] Pei, Z. et al. : Bandwidth enhancement in an integratable SiGe phototransistor by removal of excess carriers. IEEE Electron Device Lett., 25(5) (2004), 286–288.Google Scholar
[5] Yin, T. et al. : Low-cost, high efficiency and high-speed SiGe phototransistors in commercial BiCMOS. IEEE Photonics Technol. Lett., 18 (1), (2006), 55–57.CrossRefGoogle Scholar
[6] Egels, M. et al. : Design of an optically frequency or phase-controlled oscillator for hybrid fiber-radio LAN at 5.2 GHz. In Microw. Opt. Technol. Lett., 45 (2) (2005), 104–107.Google Scholar
[7] Kim, J.; Kanakaraju, S.; Johnson, W.B.; Lee, C.-H.: InP/InGaAs uni-travelling carrier heterojunction phototransistors. Electronics Lett., 45(12) (2009), 649–651.CrossRefGoogle Scholar
[8] Leven, A.; Houtsma, V.; Kopf, R.; Baeyens, Y.; Chen, Y.-K.: InP-based double-heterostructure phototransistors with 135 GHz optical gain cutoff frequency. Electronics Lett. 40(13) (2004), 833–834.Google Scholar
[9] Rosales, M.D.; Polleux, J-L.; Algani, C.: Improving Optical Detection in SiGe Heterojunction Phototransistors, in ISMOT, June 20–23, 2011.Google Scholar
[10] Rosales, M.D.: Study of SiGe HPT for Radio-over-Fiber Applications, Ph.D. thesis, Université Paris-Est, ESYCOM, ESIEE Paris, UPEM, Le Cnam, 2014.Google Scholar
[11] Marchlewski, A.; Zimmermann, H.: BiCMOS phototransistors, in Proc. of SPIE, vol. 7003, 2008.CrossRefGoogle Scholar
[12] Apsel, A.B.; Yin, T.; Pappu, A.M.: Photonic VLSI for on-chip computing architectures, in Society of Photo-Optical Instrumentation Engineers (SPIE) Conf. Series, vol. 5597, pp. 1–12, 2004.Google Scholar
[13] Chen, P.C.P.; Pappu, A.M.; Apsel, A.B.: Monolithic Integrated SiGe Optical Receiver and Detector, presented at the Lasers and Electro-Optics, 2007, in CLEO 2007. Conf. on, 2007, pp. 1–2.CrossRefGoogle Scholar
[14] Lecoy, P.; Delacressonnière, B.: Design and realization of an optically controlled oscillator for radio over fiber at 5.2 GHz,” Microwave Photonics, 2006. MWP'06, in Int. Topical Meeting on, 2006, pp. 1–4.Google Scholar
[15] Viana, C.; Tegegne, Z.G.; Rosales, M.; Polleux, J.L.; Algani, C.; Lecocq, V.; Lyszyk, C.; Denet, S.: Hybrid photo-receiver based on SiGe heterojunction photo-transistor for low-cost 60 GHz intermediate-frequency radio-over-fibre applications. IEEE Electronic Lett., 51 (8) (2015), 640–642.Google Scholar
[16] Moutier, F.; Polleux, J.L.; Rumelhard, C.; Schumacher, H.: Frequency response enhancement of a single strained layer SiGe phototransistor based on physical simulations, in GAAS Conf. of the European Microwave Week 2005, Paris, France, 2005.Google Scholar
[17] Helme, J.P.; Houstron, P.A.: Analytical modeling of speed response of heterojunction bipolar phototransistors. IEEE J. Lightwave Technol., 25 (5) (2007), 1247–1255.Google Scholar
[18] Yuan, F. et al. : MEXTRAM modeling of Si-SiGe HPTs. IEEE Trans. Electron Devices, 51 (6) (2004), 870–876.Google Scholar
[19] Rosales, M.D.; Duport, F.; Schiellein, J.; Polleux, J.L.; Algani, C.; Rumelhard, C.: Opto-microwave experimental mapping of SiGe/Si phototransistors at 850 nm. Int. J. Microw. Wireless Technol., 1 (6) (2009), 469–473.Google Scholar
[20] Liu, G.; Trasser, A.; Schumacher, H.: 33–43 GHz and 66–86 GHz VCO with high output power in an 80 GHz SiGe HBT technology. IEEE Microw. Wireless Compon. Lett., 20 (10) (2010), 557–559.Google Scholar
[21] Schiellein, J. et al. : Analysis of opto-microwave paths into a InP/InGaAs UTC-HPT, in Microwave Conf. (EuMC), 2011 41st European, October 2011, pp. 949–952.Google Scholar
[22] Polleux, J-L; Paszkiewicz, L.; Billabert, A-L.; Salset, J.; Rumelhard, C.: Optimization of InP–InGaAs HPT gain: design of an opto-microwave monolithic amplifier. IEEE Trans. Microw. Theory Tech., 52 (3) (2004), 871–881.Google Scholar
[23] Agilent: Measuring non-insertable devices,” agilent 8510–13 product note. Agilent Technol. Tech. Rep., (1999).Google Scholar