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Toward highly scaled AlN/GaN-on-Silicon devices for millimeter wave applications

Published online by Cambridge University Press:  02 May 2013

Farid Medjdoub ,
Yoann Tagro ,
Bertrand Grimbert ,
Damien Ducatteau  and
Nathalie Rolland
Farid Medjdoub*
Affiliation:
Institute of Electronic, Microelectronic and Nanotechnology (IEMN – CNRS), Villeneuve d'Ascq, France
Yoann Tagro
Affiliation:
Institute of Electronic, Microelectronic and Nanotechnology (IEMN – CNRS), Villeneuve d'Ascq, France
Bertrand Grimbert
Affiliation:
Institute of Electronic, Microelectronic and Nanotechnology (IEMN – CNRS), Villeneuve d'Ascq, France
Damien Ducatteau
Affiliation:
Institute of Electronic, Microelectronic and Nanotechnology (IEMN – CNRS), Villeneuve d'Ascq, France
Nathalie Rolland
Affiliation:
Institute of Electronic, Microelectronic and Nanotechnology (IEMN – CNRS), Villeneuve d'Ascq, France
*
Corresponding author: F. Medjdoub Email: farid.medjdoub@iemn.univ-lille1.fr
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Abstract

In this work, the possibility of achieving GaN-on-Si devices for millimeter wave applications operating at high bias is demonstrated. It is shown that highly scaled AlN/GaN-on-Si double heterostructure enables us to significantly improve electron confinement under high electric field as compared to single heterostructure while delivering high carrier density (>2 × 1013 cm−2). Subsequently, trapping effects can be minimized resulting in the highest GaN-on-Si output power density up to 40 GHz and at a drain bias of 15 V together with a record fmax close to 200 GHz. At higher bias, infrared camera analysis clearly shows that these devices are mainly limited by self-heating effects. Furthermore, low noise figure has been assessed on this heterostructure, promising integration of cost effective low noise and high power millimeter wave amplifiers.

Keywords

GaN-on-SiMillimeter waveAlN/GaNPower amplifiers
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 5 , Special Issue 3: European Microwave Week 2012 , June 2013 , pp. 335 - 340
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

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References

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