Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-28T12:08:45.221Z Has data issue: false hasContentIssue false
  • English
  • Français

An envelope tracking RF power amplifier with capacitive charge pump modulator

Published online by Cambridge University Press:  06 April 2016

Gavin Tomas Watkins  and
Konstantinos Mimis
Gavin Tomas Watkins*
Affiliation:
Toshiba Research Europe Limited, 32 Queen Square, Bristol BS1 4ND, UK. Phone: +44 (0)117 906 0740
Konstantinos Mimis
Affiliation:
Toshiba Research Europe Limited, 32 Queen Square, Bristol BS1 4ND, UK. Phone: +44 (0)117 906 0740
*
Corresponding author:G. T. Watkins Email: Gavin.watkins@toshiba-trel.com
Get access Rights & Permissions [Opens in a new window]

Abstract

An envelope tracking (ET) radio frequency (RF) power amplifier (PA) is described intended for handsets and applications where a large number of PAs are needed. Instead of the usual split frequency architecture, a linear tracking charge pump structure is proposed. This allows the supply voltage of an RF PA to increase during the peaks of a high peak-to-average power ratio signal. When combined with an LDMOS RF PA, 42.9% efficiency was achieved at 31.3 dBm output power (POUT) when amplifying a 5 MHz bandwidth 8 dB PAPR 3rd Generation Partnership Project (3GPP) long term evolution signal. The first channel adjacent power ratio (ACPR) without digital pre-distortion was −30.4 dBc, meeting the 3GPP handset emission mask. The ACPR could be improved to −32.5 dBc by adopting a curved envelope shaping function at a reduced efficiency of 38.9%.

Keywords

Circuit design and applicationsPower amplifiers and linearizers
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 8 , Special Issue 4-5: EuMW 2015 Special Issue , June 2016 , pp. 683 - 690
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]3GPP TS 36.211 E-UTRA specifications. Available from http://www.3gpp.org, viewed 29 March 2016.Google Scholar
[2]IEEE 802.11 Wireless LAN specifications. Available from http://standards.ieee.org/, viewed 29 March 2016.Google Scholar
[3]The DVB Project ETSI EN 302 755 specifications. Available from http://www.etsi.org, viewed 29 March 2016.Google Scholar
[4] Hone, T. et al. : Optimized load modulation in a Doherty amplifier using a current injection technique, 2011 European Microwave Integrated Circuits Conf. (EuMIC), Manchester, UK, 2011, 296–299.Google Scholar
[5] Hone, T.M.; Aref, A.F.; Guan, J.; Negra, R.: Noncontiguous LTE channel amplification using a multilevel outphasing transmitter, 2014 German Microwave Conf. (GeMIC), Aachen, Germany, 2014, 1–4.Google Scholar
[6] Mimis, K.; Watkins, G.T.: Impact of time misalignment and input signal statistics in dynamically load-modulated amplifiers. Int. J. Microw. Wireless Technol., 7 (2015), 327–337.CrossRefGoogle Scholar
[7] Kim, B. et al. : Pushing the envelope, IEEE Microwave Magazine, IMS Special Issue, May 2013, 68–81.CrossRefGoogle Scholar
[8]Nujira white paper: The market opportunities for envelope tracking. Available online, published Sep. 2014.Google Scholar
[9] Watkins, G.T.; Mimis, K.: Low Complexity Charge Pump Envelope Tracking RF Power Amplifier, 2015 European Microwave Conf. (EuMC), Paris, UK, 2015, 92–95.CrossRefGoogle Scholar
[10] Augeau, P. et al. : A New GaN-Bsed high-swpeed and high-power switched circuit for envelope-tracking modulators. Int. J. Microw. Wireless Technol., 6 (1) (2013), 13–21.CrossRefGoogle Scholar
[11] Walling, J.S.; Taylor, S.S.; Allstot, J.D.: A class-G supply modulator and class E-PA in 130 nm CMOS. IEEE J. Solid-State Circuits, 44 (9) (2009), 2339–2347.CrossRefGoogle Scholar
[12] Kim, J.H.; Son, H.S.; Kim, W.Y.; Park, C.S.: Envelope amplifier with multiple-linear regulator for envelope tracking power amplifier. IEEE Trans. Microw. Theory Tech., 61 (11) (2013), 3951–3960.CrossRefGoogle Scholar
[13]National Instrument white paper: 5 G massive MIMO testbed: from theory to reality. Available online, published 1st Oct. 2014.Google Scholar
[14] Marston, R.: Newnes Electronics Circuit Pocket Book. Butterworth-Heinemann, 1993, 159–162. ISBN 0750608579.Google Scholar
[15] Watkins, G.: Inductor-less envelope modulated RF PA using stacked amplifiers and envelope shaping. IET Microw. Antennas Propag., 7 (15) (2013), 1215–1220.CrossRefGoogle Scholar
[16] McCune, E.: Operating modes of dynamic power supply transmitter amplifiers. IEEE Trans. Microw. Theory Tech., 62 (11) (2014), 2511–2517.CrossRefGoogle Scholar
[17] Sedra, A.S.; Smith, K.C.: Microelectronic Circuits . Oxford University Press, 1991, 880–882. ISBN 0195103696.Google Scholar
[18] Kim, B.; Moon, J.; Kim, J.: A Multimode/Multiband Envelope Tracking Transmitter with Broadband Saturated Amplifier, Telsiks, Serbia, 2011, 215–221.Google Scholar
[19] Watkins, G.T.; Mimis, K.: Impact of Envelope Shaping on the Linearity of Envelope Tracking Transmitters, 2nd Annual Active and Passive RF Devices Seminar, Birmingham, UK, 2014, 29–32.Google Scholar
[20] Rahkonen, T.; Hietakangas, S.; Aikio, J.: AM-PM distortion caused by transistor's signal dependent input impedance, IEEE 20th European Conf. on Circuit Theory and Design (ECCTD), 2011, 833–836.CrossRefGoogle Scholar
[21] Yan, J.J.; Draxler, P.; Presti, C.D.; Kimball, D.F.; Asbeck, P.M.: Digital prediction of envelope-tracking power amplifiers under average power back-off and long-term average power efficiency for base-station applications. Int. J. Microw. Wireless Technol., 5 (2) (2013), 171–177.CrossRefGoogle Scholar
[22] Kang, D. et al. : A 34% PAE, 26-dBm output power envelope-tracking CMOS power amplifier for 10-MHz BW LTE applications, 2012 IEEE MTT-S Int. Microwave Symp. Digest (MTT), Montréal, Canada, 2012, 1–3.CrossRefGoogle Scholar
[23] Kim, H. et al. : Efficiency enhancement amplifier using a digitally-controlled dynamic bias switching circuit. Microw. J., 56 (2013), 106–120.Google Scholar
[24] Modi, S.S.; Balsara, P.T.; Eliezer, O.E.: Reduced bandwidth class H supply modulation for wideband RF power amplifiers, 2012 IEEE 13th Annual Wireless and Microwave Technology Conf. (WAMICON), Florida, USA, 2012, 1–7.CrossRefGoogle Scholar
[25] Hiura, S.; Sumi, H.; Takahashi, H.: High-efficiency 400 W power amplifier with dynamic drain votlage control for 6 MHz OFDM signal, 2010 IEEE MTT-S Int. Microwave Symp. Digest (MTT), Anaheim, USA, 2010, 936–939.CrossRefGoogle Scholar
[26] Bracle, A.; Rathgeber, L.; Siegert, F.; Heck, S.; Berroth, M.: Power supply modulation for RF applications, EPE-PEMC 2012 ECCE Europe, 15th Int. Power Electronics and Motion Control Conf., Movi Sad, Serbia, 2012, LS8d.3–1–LS8d.3–5.CrossRefGoogle Scholar