Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-13T01:10:19.020Z Has data issue: false hasContentIssue false
  • English
  • Français

Design and evaluation of 20-GHz power amplifiers in 130-nm CMOS

Published online by Cambridge University Press:  19 June 2009

Mattias Ferndahl ,
Ted Johansson  and
Herbert Zirath
Mattias Ferndahl*
Affiliation:
Microwave Electronics Lab, Department of Micro Technology and Nano Science, Chalmers University of Technology, SE-412 96 Göteborg, Sweden. Fax: +46-(0)31-164513.
Ted Johansson
Affiliation:
Infineon Technologies Nordic AB, SE-164 81 Kista, Sweden.
Herbert Zirath
Affiliation:
Microwave Electronics Lab, Department of Micro Technology and Nano Science, Chalmers University of Technology, SE-412 96 Göteborg, Sweden. Fax: +46-(0)31-164513.
*
Corresponding author: M. Ferndahl E-mail: mattias.ferndahl@chalmers.se
Get access Rights & Permissions [Opens in a new window]

Abstract

The use of 130-nm CMOS for power amplifiers at 20 GHz is explored through a set of power amplifiers as well as transistor level measurements. The power amplifiers explore single versus cascode configuration, smaller versus larger transistor sizes, and the combination of two amplifiers using power splitters/combiners. A maximum output power of 63 mW at 20 GHz was achieved. Transistor-level characterization using load pull measurements on 1-mm gate width transistors yielded 148-mW/mm output power. Transistor modeling and layout for power amplifiers are also discussed. An estimate on the maximum achievable output at 20 GHz from 130-nm CMOS power amplifiers, based on findings in this paper and the literature, is finally presented.

Keywords

CMOS130 nmK-bandMMICPower amplifier
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Special Issue 4: European Microwave Week 2008 , August 2009 , pp. 301 - 307
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Ferndahl, M.; Motlagh, B.M.; Masud, A.; Angelov, I.; Vickes, H.O.; Zirath, H.: CMOS devices and circuits for microwave and millimetre wave applications, In Proc. 35th European Microwave Conf., 2005, 105.Google Scholar
[2]Yao, T. et al. : Algorithmic design of CMOS LNAs and PAs for 60-GHz radio. IEEE J. Solid-State Circuits, 42 (2007), 1044–1057.CrossRefGoogle Scholar
[3]Razavi, B.: CMOS transceivers at 60 GHz and beyond, in IEEE Int. Symp. Circuits and Systems, Proc., New Orleans, LA, United States, 2007, 1983–1986.CrossRefGoogle Scholar
[4]Heydari, B.; Bohsali, M.; Adabi, E.; Niknejad, A.M.: Millimeter-wave devices and circuit blocks up to 104 GHz in 90 nm CMOS. IEEE J. Solid-State Circuits, 42 (2007), 2893–2903.CrossRefGoogle Scholar
[5]Ferndahl, M.; Johansson, T.; Zirath, H.: 20 GHz power amplifier design in 130 nm CMOS, In European Microwave Integrated Conf., Amsterdam, 2008, 254–257.CrossRefGoogle Scholar
[6]LaRocca, T.; Chang, M.C.F.: 60 GHz CMOS differential and transformer-coupled power amplifier for compact design, In Radio Frequency Integrated Circuits Symp., 2008, 65–68.CrossRefGoogle Scholar
[7]Scholvin, J.; Greenberg, D.R.; del Alamo, J.A.: Fundamental power and frequency limits of deeply-scaled CMOS for RF power applications, In Int. Electron Devices Meeting Technical Digest, 2006, 1–4.CrossRefGoogle Scholar
[8]Ferndahl, M.; Vickes, H.-O.; Zirath, H.; Angelov, I.; Ingvarson, F.; Litwin, A.: 90-nm CMOS for microwave power applications. IEEE Microwave Wirel. Compon. Lett., 13 (2003), 523–525.CrossRefGoogle Scholar
[9]Ferndahl, M.; Nemati, H.; Parvais, B.; Zirath, H.; Decoutere, S.: Deep submicron CMOS for millimeter wave power applications. IEEE Microwave Wirel. Compon. Lett., 18 (2008), 3.CrossRefGoogle Scholar
[10]Ferndahl, M.; Fager, C.; Andersson, K.; Linnér, P.; Vickes, H.O.; Zirath, H.: A general statistical equivalent-circuit-based de-embedding procedure for high-frequency measurements. IEEE Trans. Microwave Theory Tech., 56 (2008), 2692–2700.CrossRefGoogle Scholar
[11]Vasylyev, A.V.; Weger, P.; Bakalski, W.; Simbuerger, W.: 17-GHz 50-60 mW power amplifiers in 0.13 µm standard CMOS. IEEE Microwave Wirel. Compon. Lett., 16 (2006), 37–39.CrossRefGoogle Scholar
[12]Cao, C.; Xu, H.; Su, Y.; O, K.: An 18-GHz, 10.9-dBm fully-integrated power amplifier with 23.5 PAE in 130-nm CMOS, In Proc. 31st European Solid-State Circuit Conf., 2005, 137–140.Google Scholar
[13]Komijani, A.; Natarajan, A.; Hajimiri, A.: A 24-GHz, +14.5-dBm fully integrated power amplifier in 0.18-µm CMOS. IEEE J. Solid-State Circuits, 40 (2005), 1901.CrossRefGoogle Scholar
[14]Tsai, J.-H.; Lee, Y.-L.; Huang, T.-W.; Yu, C.-M.; Chern, J.G.J.: “A 90-nm CMOS broadband and miniature Q-band balanced medium power amplifier”, In IEEE MTT-S Int. Microwave Symp. Dig., 2007, 1129–1132.CrossRefGoogle Scholar
[15]Kuo, J.-L.; Tsai, Z.-M.M.; Wang, H.: A 19.1-dBm fully-integrated 24 GHz power amplifier using 0.18-µm CMOS technology, In European Microwave Integrated Circuits Conf., Amsterdam, 2008, 1425–1428.CrossRefGoogle Scholar
[16]Sasse, G.T.; Kuper, F.G.; Schmitz, J.: MOSFET degradation under RF stress. IEEE Trans. Electron Devices, 55 (2008), 3167–3174.CrossRefGoogle Scholar
[17]Vasylyev, A.; Weger, P.; Simburger, W.: Ultra-broadband 20.5–31 GHz monolithically-integrated CMOS power amplifier. Electron. Lett., 41 (2005), 1281–1282.CrossRefGoogle Scholar
[18]Natarajan, A.; Komijani, A.; Hajimiri, A.: A fully integrated 24-GHz phased-array transmitter in CMOS. IEEE J. Solid-State Circuits, 40 (2005), 2502–2513.CrossRefGoogle Scholar
[19]Shigematsu, H.; Hirose, T.; Brewer, F.; Rodwell, M.: Millimeter-wave CMOS circuit design. IEEE Trans. Microwave Theory Tech., 53 (2005), 472–477.CrossRefGoogle Scholar
[20]Khanpour, M.; Voinigescu, S.P.; Yang, M.T.: A high-gain, low-noise, +6 dBm PA in 90 nm CMOS for 60-GHz radio, In IEEE Compound Semiconductor Integrated Circuits Symp., Digest, Voinigescu, S.P., Ed., 2007, 1–4.CrossRefGoogle Scholar
[21]Tanomura, M. et al. : TX and RX front-ends for the 60 GHz band in 90 nm standard bulk CMOS, In IEEE Int. Solid-State Circuits Conf., Digest Technical Papers, 2008.CrossRefGoogle Scholar
[22]Chowdhury, D.; Reynaert, P.; Niknejad, A.: “A 60 GHz 1V +12.3 dBm transformer-coupled wideband PA in 90 nm CMOS, In IEEE Int. Solid-State Circuits Conf., Digest Technical Papers, 2008.CrossRefGoogle Scholar
[23]Suzuki, T.; Kawano, Y.; Sato, M.; Hirose, T.; Joshin, K.: 60 and 77 GHz power amplifiers in standard 90 nm CMOS, In IEEE Int. Solid-State Circuits Conf., Digest Technical Papers, 2008.CrossRefGoogle Scholar
[24]Heydari, B.; Bohsali, M.; Adabi, E.; Niknejad, A.M.A.: A 60 GHz power amplifier in 90 nm CMOS technology, In IEEE Custom Integrated Circuits Conf., Bohsali, M., Ed., 2007, 769–772.CrossRefGoogle Scholar
[25]Yao, T.; Gordon, M.; Yau, K.; Yang, M.T.; Voinigescu, S.P.: 60-GHz PA and LNA in 90-nm RF-CMOS, In IEEE Radio Frequency Integrated Circuits Symp. Digest, San Francisco, CA, USA, 2006, pp. 125–128.Google Scholar