This paper presents a theoretical and experimental analysis of the capabilities of the dual-input Doherty power amplifier (DPA) architecture to mitigate efficiency and output power degradations when used in a mismatched load environment. Following a simplified linear piecewise approach, an analytical demonstration is proposed to derive optimal radio frequency drives applied to the Auxiliary path of the DPA to restore power performances while avoiding large signal voltage clipping of active cells. The proposed analytical study is corroborated with harmonic balance simulated results of a C-band, 20-W GaN DPA prototype. The fabricated dual-input DPA prototype has been measured under 1.5-VSWR mismatch configurations to validate the proposed analysis.

Millimeter-wave band-pass filters using spherical dielectric resonators are presented. The dielectric spheres are sandwiched between metal plates and are excited by a simple microstrip line structure on a thin-film circuit board. As such, these filters could also be implemented in the back-end-of-line layers of an integrated circuit. A single resonator, based on a diameter 0.6 mm alumina ceramic sphere, is shown to resonate with high unloaded Q-factor of 750 at 170 GHz. A three-sphere band-pass filter is measured showing <5 dB insertion loss and 0.4% bandwidth at 170 GHz. A concept for mechanically tuning of a two-sphere band-pass filter is demonstrated for a filter operating around 105 GHz. The measured filter shows approximately 5 dB insertion loss and <0.5% bandwidth and its passband can be varied over 3 GHz of frequency, or 3%. Technological challenges are discussed.

In this paper, a ultra-wideband (UWB) bandpass filter with stopband characteristics is presented using a multi-mode resonator (MMR) technique. An MMR is formed by loading three dumbbell-shaped (Mickey and circular) shunt stubs placed in the center and two symmetrical locations from ports, respectively. Three circular and arrowhead defected ground structures on the ground plane are introduced to achieve UWB bandwidth with a better roll-off rate. The proposed filter exhibits stopband characteristics from 10.8 to 20 GHz with a 0.4 dB return loss. The group delay and roll-off rate of the designed filter are <0.30 ns in the passband and 16 dB/GHz at lower and higher cut-off frequencies, respectively. The dimension of the filter is 0.74λg × 0.67λg mm2 and was fabricated on a cost-effective substrate. All simulated results are verified through the experimental results.

A time-domain duplexing radio frequency (RF) front-end with integrated antenna switch, power amplifier (PA), and low noise amplifier (LNA) was developed aiming for fifth-generation communication (5G) applications covering 24–28 GHz frequency range. Antenna switch utilizes pre-existing LNA input matching network together embedded with grounded shunt transistor switch to provide sufficient isolation of receive side from PA. Respectively, high impedance of off-state PA is assumed to achieve acceptable receive performance. Resulting output power is 13.6 dBm with 15 dB of peak small-signal gain at 28 GHz. Maximum average channel power was 4.8 dBm with 100 MHz 64-QAM OFDM signal within 5G adjacent channel power ratio and error vector magnitude specifications. Receive (RX) front-end achieves 5 dB noise figure at 24 GHz and 7 dB of peak gain. Performances of amplifiers degraded only by 2 dB from switch integration. The front-end dissipates 183 and 4.6 mW of power in transmit and receive mode, respectively. The simplistic design method minimizes cost both in circuit area (only 0.19 mm2) and design time making this front-end an attractive alternative in massive phased array applications using 22 nm complementary metal oxide semiconductor (CMOS) fully depleted silicon on insulator process.

In this paper, a millimeter-wave (MMW) dual-mode and dual-band switchable Gilbert up-conversion mixer in a commercial 65-nm complementary metal oxide semiconductor (CMOS) process is presented. By simply changing the bias, the proposed CMOS Gilbert up-conversion mixer can be switched between subharmonic and fundamental operation modes for MMW dual-band applications. With a low local oscillator pumping power of 3 dBm and low dc power consumption of 6 mW, the proposed CMOS Gilbert up-conversion mixer exhibits a measured conversion gain of −0.5 ± 1.5 dB from 37 to 50 GHz and 2.5 ± 1.5 dB from 17.5 to 32 GHz for the subharmonic and fundamental modes, respectively.

In this paper, a triple-band bandpass filter using a multi-mode half-mode substrate integrated waveguide (HMSIW) cavity is presented. In this design, back-to-back connected half-mode defected ground structure (DGS) is loaded into the HMSIW cavity, which generates the first passband. The first four modes of HMSIW cavity are TM110, TM120, TM310, and TM320. They have been used to generate second and third passbands. The slot line perturbation is used to shift the modes close to each other. Here, TM110 and TM120 constitute second passband, and TM310 and TM320 give third passband. Moreover, the notch band is designed using embedded open-circuited stub to improve the attenuation between the second and third passbands. The proposed filter is designed and fabricated on RT/Duroid 5880 substrate with a thickness of 0.508 mm. The measured results are in line with simulated ones for each of the passbands, and the center frequencies are 6.28, 13, and 19.12 GHz.

Multi-device radio frequency power amplifiers (PAs) often exhibit strongly non-linear behavior in combination with long-term memory effects, leading to an extremely challenging model development cycle. This paper presents a new, dynamic, behavioral modeling technique, based on a combination of the real-valued decomposed piecewise method and concepts from the field of machine learning. The underlying theory of the proposed modeling technique is provided, along with a detailed modeling procedure. Experimental results show that the proposed decomposed piecewise support vector regression (SVR) model leads to significant performance improvements when compared with standard SVR models for both single transistor and multi-transistor PAs. Different model thresholds are used to test the proposed model performance for both PA types. For the single-transistor PA, modeled using only one partition, an approximately 10 dB normalized mean square error (NMSE) reduction is seen when compared with the standard SVR model. For the same PA, when utilizing two partitions, the reduction improves to 14 dB. When applied to a multi-device Doherty PA, the NMSE between model and measurement data is −50 dB, representing more than 10 dB improvement compared with the standard SVR model.

A novel, broadband, nonlinear behavioral model, based on support vector regression (SVR) is presented in this paper. The proposed model, distinct from existing SVR-based models, incorporates frequency information into its formalism, allowing the model to perform accurate prediction across a wide frequency band. The basic theory of the proposed model, along with model implementation and the model extraction procedure for radio frequency transistor devices is provided. The model is verified through comparisons with the simulation of an equivalent circuit model, as well as experimental measurements of a 10 W Gallium Nitride (GaN) transistor. It is seen that the efficiency prediction throughout the Smith chart, for varying fundamental and second harmonic loads, across a wideband frequency range, show excellent fidelity to the measured results. Device dc self-biasing is also modelled to allow prediction of power amplifier (PA) efficiency, which is shown to be highly accurate when compared with corresponding measured data. Finally, a class-J PA is constructed and measured across the frequency with a large-signal input tone. The resulting measured and modelled values of key PA performance figures are shown to be in excellent agreement, indicating the model is suitable for broadband PA design.

This paper presents the design of frequency-tunable dual-band, tri-band and quad-band bandpass filters (BPFs). The proposed three BPFs can be independently tuned and individually switched by varying the capacitances of the varactors. In the designed tunable dual-band BPF (TD-BPF), common input/output feed lines are utilized for two tunable dual-mode resonators (TDRs). Further, three TDRs and four TDRs are employed to achieve tunable tri-band BPF (TT-BPF) and tunable quad-band BPF (TQ-BPF), respectively. Then, the TD-BPF and the TT-BPF are fabricated and measured to verify individual tunability and independent switchability. For the TD-BPF, the measurement results show that the center frequency (CF) of the first passband varies from 1.37 to 1.62 GHz, and the CF of the second passband varies from 2.3 to 2.64 GHz. In the measured TT-BPF, the tuning ranges of CFs of three passbands are 1.3–1.5 GHz, 2.36–2.6 GHz, and 3–3.54 GHz, respectively.

A microstrip-based lowpass filter (LPF) containing modified ring structures has been presented. Ring resonators are used to form a sharp transition region. In addition, rectangular- and tapered-shaped suppressing cells are used to create an ultra-wide stopband region. By combining the designed ring resonator and suppressors, an LPF has been designed with −3 dB cut-off frequency at 1.83 GHz. A sharp transition region has been achieved from 1.83 (at −3 dB) to 2.1 GHz (at −60 dB). A stopband region has been concluded from 2 to 21 GHz (with the corresponding attenuation level of at least 20 dB). The measured insertion loss is better than 0.1 dB (equal to a return loss of 18.1 dB) in the passband region. The proposed circuit is fabricated and measured. The measured results have an appropriate adaption with the simulated results.

This paper presents a 31 GHz integrated power amplifier (PA) in 28 nm Fully Depleted Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) technology and targeting SoC implementation for 5 G applications. Fine-grain wide range power control with more than 10 dB tuning range is enabled by body biasing feature while the design improves voltage standing wave ratio (VSWR) robustness, stability and reverse isolation by using optimized 90° hybrid couplers and capacitive neutralization on both stages. Maximum power gain of 32.6 dB, PAEmax of 25.5% and Psat of 17.9 dBm are measured while robustness to industrial temperature range and process spread is demonstrated. Temperature-induced performance variation compensation, as well as amplitude-to-phase modulation (AM-PM) optimization regarding output power back-off, are achieved through body-bias node. This PA exhibits an International Technology Roadmap for Semiconductors figure of merit (ITRS FOM) of 26 925, the highest reported around 30 GHz to authors' knowledge.

A miniaturized high-isolation quadplexer with wide upper-stopband based on open and short stub-loaded multimode-resonator is proposed in this paper. Based on the theory of multimode-resonator and stepped impedance resonator (SIR), the compact quadplexer is designed by using multimode-resonator and SIR. In order to further miniaturize the size of the circuit, the multimode resonator is employed as the common resonator to replace the common matching network of the quadplexer and the SIRs are curved. Equivalent topology circuit is given to analyze and design the quadplexer. Detailed analyses are given according to the equivalent circuits. The proposed compact quadplexer working at central frequencies of 1.8, 2.4, 2.8, and 3.5 GHz with over 40 dB isolation is finally simulated, fabricated, and measured. The measured results agree well with the simulated ones. The total size of the fabricated quadplexer is 0.36 λg × 0.42 λg.

In this work, microwave planar resonators are printed with silver nanoparticle inks using two printing technologies, inkjet printing and aerosol jet printing, on polyimide substrates. The microwave resonators used in this paper operate in the frequency band 5–21 GHz. The printing parameters, such as the number of printed layers of silver nanoparticle inks, drop spacing, and sintering time, were optimized to ensure repeatable and conductive test patterns. To improve the electrical conductivity of silver deposits, which are first dried using a hot plate or an oven, two complementary sintering methods are used: intense pulsed light (IPL) and laser sintering. This paper presents the results of different strategies for increasing the final quality factor of printed planar resonators and the trade-offs (sintering time versus final conductivity/unloaded Q) that can be reached. Improvement of the resonator unloaded quality factor (up to +55%) and of the equivalent electrical conductivity (up to 14.94 S/μm) at 14 GHz have been obtained thanks to these nonconventional sintering techniques. The total sintering durations of different combinations of sintering techniques (hot plate, oven, IPL, and laser) range from 960 to 90 min with a final conductivity from 14.94 to 7.1 S/μm at 14 GHz, respectively.

This paper proposes and presents a millimeter-wave (MMW) fundamental and subharmonic hybrid mixer in a 65-nm CMOS technology. Based on a hybrid structure with two switching quads and a quasi-diplexer, the proposed circuit can function either as a fundamental mixer (FM) or a subharmonic mixer (SHM) for dual-band applications. An application of the MMW hybrid mixer in a concurrent dual-band receiver is also discussed, which indicates that the proposed mixer can operate at two different MMW frequency bands concurrently as long as the frequency conversion schemes are carefully designed. Measured results show that the 3-dB RF bandwidth of the MMW hybrid mixer ranges from 16 to 35 GHz for the FM mode and 30 to 53 GHz for the SHM mode, respectively.

Sigma-delta radio over fiber (ΣΔ-RoF) is an expedient technology for next-generation networks including 5G cloud/centralized radio access networks (C-RAN). In this article, we demonstrate a realistic experimental scenario for ΣΔ-RoF link targeting C-RAN fronthaul applications, by using baseband second-order 1-bit sigma-delta modulation (ΣΔ-M). The experimental set-up validates the LTE 20 MHz signals having modulation order of 256-quadrature amplitude modulation for a carrier frequency of 3 GHz, up to 10 km of standard single mode fiber. A detailed analysis of the ΣΔ-RoF system performance is reported by adjacent channel leakage ratio and error vector magnitude. Furthermore, an experimental study is evaluated where ΣΔ-RoF is compared with its counterparts. It is deduced that ΣΔ-RoF corroborates the present range of C-RAN fronthaul networks and can be a promising candidate for future mobile haul applications.

Bessel, Bessel-Gauss, and Gaussian beams have widely been investigated in optics in the paraxial approximation, under the frame of a scalar wave theory. Such approximations can hardly be applied in the microwave/millimeter-wave range, where the vectorial nature of the electromagnetic fields cannot be neglected, and experimental realizations for some of these beams appeared only recently. In this work, we discuss the generation of Bessel, Bessel-Gauss, and Gaussian beams through a fully vectorial electromagnetic approach. The field derivation of all these beams is first illustrated and numerical evaluations are then reported to compare their different propagation and diffractive behaviors. Finally, an innovative approach for realizing such solutions with planar microwave devices exploiting leaky waves is demonstrated through accurate numerical simulations.

Continuous mode class-J radio-frequency (RF) power amplifier is a promising technique that extends the operating bandwidth of the conventional class-B power amplifier. However, the maximum theoretical efficiency is limited to that of the class-B power amplifier. In this paper, an enhanced mode of operation for the class-J power amplifier is proposed by incorporating a third harmonic voltage component to produce an optimum waveform for maximizing the fundamental voltage component and thereby to increase the drain efficiency and introduce a new design space. A detailed derivation for the necessary relations of output power, drain efficiency, and the required harmonic load impedances is provided, showing a significant improvement in theoretical maximum efficiency from 78.5 to 89.8%. In order to confirm the developed analytic approach, a 10 W prototype amplifier model was designed and fabricated to operate within the global system for mobile communications (GSM) frequency band 850–950 MHz using a commercial GaN power high electron mobility transistor (HEMT). The experimental results have indicated that the drain efficiency of the circuit varies from 68 to 80% within the desired band.

This paper presents a compact multilayer substrate integrated waveguide (SIW) bandpass filter with wide stopband. The square SIW cavity resonators in multilayer substrates are horizontally and vertically coupled with magnetic coupling. By properly designing the coupling structure, the couplings between the higher-order resonant modes can be suppressed. Compared with the conventional single-layer SIW filters, the proposed multilayer SIW filter also exhibits a compact size. To verify the design concept, a double-layered SIW filter is fabricated and measured. The measured results agree well with the simulations. The measured results show that the upper stopband of the filter is extended to 2.73 times of the center frequency 8.02 GHz.