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An experimental study of the temperature and stoichiometry dependence of diamond growth in low pressure flat flames

Published online by Cambridge University Press:  03 March 2011

J.S. Kim  and
M.A. Cappelli
J.S. Kim
Affiliation:
Mechanical Engineering Department, Stanford University, Stanford, California 94305–3032
M.A. Cappelli*
Affiliation:
Mechanical Engineering Department, Stanford University, Stanford, California 94305–3032
*
a)Author to whom all correspondence should be sent.
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Abstract

A study of the temperature and stoichiometry dependence of diamond synthesis in low pressure premixed acetylene-oxygen flames is presented. A specially designed low pressure flat flame operating at 40 Torr is employed to deposit diamond films uniformly over areas of at least 2 cm2. Under optimized conditions of substrate temperatures and flame equivalence ratios, high quality translucent diamond that is well faceted is synthesized exhibiting first-order Raman fullwidths (half maximum) of about 2.5 cm−1. Diamond growth rates under these optimum conditions are approximately 4 μm/h. The film growth rate is found to drop off substantially at high substrate temperatures, with little or no carbon deposited beyond a temperature of 1070 °C. The growth behavior in response to changes in flame equivalence ratio and substrate temperature is discussed in terms of the possible role that oxygen-containing species may have on surface chemistry. The results described here are also used to project a base cost for manufacturing diamond under these process conditions.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 1 , January 1995 , pp. 149 - 157
Copyright
Copyright © Materials Research Society 1995

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References

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