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Broad range adjustable emission of stacked SiNx/SiOy layers

Published online by Cambridge University Press:  31 January 2011

J. Barreto ,
M. Perálvarez ,
A. Morales ,
B. Garrido ,
J. Montserrat  and
C. Domínguez
J. Barreto*
Affiliation:
Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica, Consejo Superior de Investigaciones Científicas (IMB-CNM, CSIC), Bellaterra 08193, Barcelona, Spain
M. Perálvarez
Affiliation:
Enginyería i Materials Electrónics (EME), IN2UB, Departament d’Electrònica, Universitat de Barcelona, Martí i Franquès 1, 08028 Barcelona, Spain
A. Morales
Affiliation:
Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica, Consejo Superior de Investigaciones Científicas (IMB-CNM, CSIC), Bellaterra 08193, Barcelona, Spain
B. Garrido
Affiliation:
Enginyería i Materials Electrónics (EME), IN2UB, Departament d’Electrònica, Universitat de Barcelona, Martí i Franquès 1, 08028 Barcelona, Spain
J. Montserrat
Affiliation:
Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica, Consejo Superior de Investigaciones Científicas (IMB-CNM, CSIC), Bellaterra 08193, Barcelona, Spain
C. Domínguez
Affiliation:
Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica, Consejo Superior de Investigaciones Científicas (IMB-CNM, CSIC), Bellaterra 08193, Barcelona, Spain
*
a)Address all correspondence to this author. e-mail: jorge.barreto@cnm.es
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Abstract

Structures containing stacked layers of silicon-rich silicon nitride (green-blue luminescence) and oxide (red luminescence) fabricated by ion implantation are reported, and it is shown how a Si-based material can be engineered to emit over a broad range. To study in depth the emission from implanted SiNx matrices, single nitride layers have been also fabricated by the first time. Si excess variation and the relative thickness of nitride and oxide provide the intensity and position variation of the peaks, and thus open the way to engineer a stack with desired emission properties over the whole visible spectrum.

Keywords

Ion-implantationLuminescenceNanostructure
Type
Rapid Communications
Information
Journal of Materials Research , Volume 23 , Issue 6 , June 2008 , pp. 1513 - 1516
Copyright
Copyright © Materials Research Society 2008

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References

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