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Calculated phase diagrams for activated low pressure diamond growth from C–H, C–O, and C–H–O systems

Published online by Cambridge University Press:  31 January 2011

Ji-Tao Wang
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China
Yong-Zhong Wan
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China
David Wei Zhang
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China
Zhi-Jie Liu
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China
Zhong-Qiang Huang
Affiliation:
Department of Applied Mathematics, Tongji University, Shanghai 200092, China
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Abstract

Three-dimensional temperature (T)–pressure (P)–composition (X) phase diagrams of binary carbon-hydrogen (C–H) and carbon-oxygen (C–O) systems for activated low pressure diamond growth have been calculated. Based on an approximation of linear combination between C–H and C–O systems, a projective ternary carbonhydrogen-oxygen (C–H–O) phase diagram has also been obtained. There is always a diamond growth region in each of these phase diagrams. Once a supply of external activating energy stops, the diamond growth region will not exist. Nearly all of the reliable experimental data reported in the literature drop into the possible diamond growth region of the calculated projective ternary C–H–O phase diagram under the conditions of 0.01–100 kPa and above 700 K.

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Articles
Copyright
Copyright © Materials Research Society 1997

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