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Characteristics of spin-on ferroelectric SrBi2Ta2O9 thin film capacitors for ferroelectric random access memory applications

Published online by Cambridge University Press:  31 January 2011

Peir Y. Chu ,
Robert E. Jones Jr. ,
Peter Zurcher ,
Deborah J. Taylor ,
Bo Jiang ,
Sherry J. Gillespie ,
Y. T. Lii ,
Mike Kottke ,
Peter Fejes  and
Wei Chen
Peir Y. Chu
Affiliation:
Advanced Materials Group, Materials Research and Strategic Technologies, Motorola, Austin, Texas 78721
Robert E. Jones Jr.
Affiliation:
Advanced Materials Group, Materials Research and Strategic Technologies, Motorola, Austin, Texas 78721
Peter Zurcher
Affiliation:
Advanced Materials Group, Materials Research and Strategic Technologies, Motorola, Austin, Texas 78721
Deborah J. Taylor
Affiliation:
Advanced Materials Group, Materials Research and Strategic Technologies, Motorola, Austin, Texas 78721
Bo Jiang
Affiliation:
Advanced Materials Group, Materials Research and Strategic Technologies, Motorola, Austin, Texas 78721
Sherry J. Gillespie
Affiliation:
Advanced Materials Group, Materials Research and Strategic Technologies, Motorola, Austin, Texas 78721
Y. T. Lii
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, Austin, Texas 78721
Mike Kottke
Affiliation:
Materials Characterization Laboratories, Materials Research and Strategic Technologies, Motorola, Mesa, Arizona 85202
Peter Fejes
Affiliation:
Materials Characterization Laboratories, Materials Research and Strategic Technologies, Motorola, Mesa, Arizona 85202
Wei Chen
Affiliation:
Materials Characterization Laboratories, Materials Research and Strategic Technologies, Motorola, Mesa, Arizona 85202
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Abstract

We report on the properties and characterization of SrBi2Ta2O9 (SBT, or Y − 1) thin film capacitors for ferroelectric random access memory (FERAM) applications. The films were prepared by spin-coating from carboxylate precursors. The remanent polarization (Pr) was 5−6 μC/cm2 and the coercive field was ∼55 kV/cm. Excellent fatigue endurance was observed up to 1011 cycles. Auger analysis indicates bismuth diffusion through the Pt electrode after capacitor anneal which might require excess Bi in the precursor solution for stoichiometry control. No detectable amount of α emission was found from SBT films, which reduces the possibility of soft error when used in the memory devices.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 5 , May 1996 , pp. 1065 - 1068
Copyright
Copyright © Materials Research Society 1996

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References

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