Hostname: page-component-7bb8b95d7b-pwrkn Total loading time: 0 Render date: 2024-09-17T07:48:35.401Z Has data issue: false hasContentIssue false
  • English
  • Français

Current-induced interfacial reactions in Ni/Sn–3Ag–0.5Cu/Au/Pd(P)/Ni–P flip chip interconnect

Published online by Cambridge University Press:  23 November 2011

M.L. Huang ,
S. Ye  and
N. Zhao
M.L. Huang*
Affiliation:
Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, People’s Republic of China
S. Ye
Affiliation:
Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, People’s Republic of China
N. Zhao
Affiliation:
Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, People’s Republic of China
*
a)Address all correspondence to this author. e-mail: huang@dlut.edu.cn
Get access

Abstract

The current-induced interfacial reactions in the Ni/Sn-3.0Ag-0.5Cu/Au/Pd(P)/Ni–P (ENEPIG) flip chip interconnects and the failure mechanism during electromigration (EM) were reported. When ENEPIG was the cathode, EM significantly enhanced the consumption of Ni–P leaving a Ni3P layer; once the Ni–P was completely consumed, the growth of Ni2SnP was accelerated. The dissolved Ni atoms from the Ni–P and the interfacial intermetallic compounds (IMCs) were driven toward the anode upon electron current stressing and precipitated as large (Ni,Cu)3Sn4 IMCs. The excessive consumption of Ni–P and the formation of voids were responsible for the EM-induced failures. When Ni was the cathode, the rapid localized dissolutions of Ni under bump metallization (UBM) and Cu pad in the current crowding region resulted in a two-stage transformation of interfacial IMCs at the opposite Ni–P/solder interface. The localized dissolutions of Ni UBM and Cu pad on chip, as well as the formation of voids, were responsible for the EM-induced failures.

Keywords

ElectromigrationDiffusionChemical reaction
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 24 , 28 December 2011 , pp. 3009 - 3019
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Tu, K.N.: Recent advances on electromigration in very-large-scale-integration of interconnects. J. Appl. Phys. 94, 5451 (2003).CrossRefGoogle Scholar
2.Zhang, L., Ou, S., Huang, J., Tu, K.N., Gee, S., and Nguyen, L.: Effect of current crowding on void propagation at the interface between intermetallic compound and solder in flip chip solder joints. Appl. Phys. Lett. 88, 012106 (2006).CrossRefGoogle Scholar
3.Jen, M.H.R., Liu, L.C., and Lai, Y.S.: Modeling of electromigration on void propagation at the interface between under bump metallization and intermetallic compound in flip-chip ball grid array solder joints. J. Appl. Phys. 107, 093526 (2010).CrossRefGoogle Scholar
4.Lin, Y.H., Tsai, C.M., Hu, Y.C., Lin, Y.L., and Kao, C.R.: Electromigration-induced failure in flip-chip solder joints. J. Electron. Mater. 34, 27 (2005).CrossRefGoogle Scholar
5.Lin, Y.L., Chang, C.W., Tsai, C.M., Lee, C.W., and Kao, C.R.: Electromigration-induced UBM consumption and the resulting failure mechanisms in flip-chip solder joints. J. Electron. Mater. 35, 1010 (2006).CrossRefGoogle Scholar
6.Lin, Y.L., Lai, Y.S., Tsai, C.M., and Kao, C.R.: Effect of surface finish on the failure mechanisms of flip-chip solder joints under electromigration. J. Electron. Mater. 35, 2147 (2006).CrossRefGoogle Scholar
7.Lin, Y.L., Lai, Y.S., Lin, Y.W., and Kao, C.R.: Effect of UBM thickness on the mean time to failure of flip-chip older joints under electromigration. J. Electron. Mater. 37, 96 (2008).CrossRefGoogle Scholar
8.Strandjord, A.J.G., Popelar, S., and Jauernig, C.: Interconnecting to aluminum- and copper-based semiconductors (electroless-nickel/gold for solder bumping and wire bonding). Microelectron. Reliab. 42, 265 (2002).CrossRefGoogle Scholar
9.Yen, Y.W., Tsai, P.H., Fang, Y.K., Lo, S.C., Hsieh, Y.P., and Lee, C.: Interfacial reactions on Pb-free solders with Au/Pd/Ni/Cu multilayer substrates. J. Alloy. Compd. 503, 25 (2010).CrossRefGoogle Scholar
10.Peng, S.P., Wu, W.H., Ho, C.E., and Huang, Y.M.: Comparative study between Sn37Pb and Sn3Ag0.5Cu soldering with Au/Pd/Ni(P) tri-layer structure. J. Alloy. Compd. 493, 431 (2010).CrossRefGoogle Scholar
11.Yoon, J.W., Noh, B.I., Yoon, J.H., Kang, H.B., and Jung, S.B.: Sequential interfacial intermetallic compound formation of Cu6Sn5 and Ni3Sn4 between Sn-Ag-Cu solder and ENEPIG substrate during a reflow process. J. Alloy. Compd. 509, L153 (2011).CrossRefGoogle Scholar
12.Wu, W.H., Lin, C.S., Huang, S.H., and Ho, C.E.: Influence of palladium thickness on the soldering reactions between Sn-3Ag-0.5Cu and Au/Pd(P)/Ni(P) surface finish. J. Electron. Mater. 39, 2387 (2010).CrossRefGoogle Scholar
13.Lu, C.T., Tseng, H.W., Chang, C.H., Huang, T.S., and Liu, C.Y.: Retardation of electromigration-induced Ni(P) consumption by an electroless Pd insertion layer. Appl. Phys. Lett. 96, 232103 (2010).CrossRefGoogle Scholar
14.Kim, D.W., Lee, J.K.J., Lee, M.J., Pai, S.Y., Chen, S., and Kuo, F.: Evaluation of electromigration (EM) life of ENEPIG and CuSOP surface finishes with various solder bump materials, in Proceedings of the 60th Electronic Components and Technology Conference, Las Vegas, NV, 2010, p. 1841.Google Scholar
15.Kuan, W.C., Liang, S.W., and Chen, C.: Effect of bump size on current density and temperature distributions in flip-chip solder joints. Microelectron. Reliab. 49, 544 (2009).CrossRefGoogle Scholar
16.Lai, Y.S., Chen, K.M., Kao, C.L., Lee, C.W., and Chiu, Y.T.: Electromigration of Sn-37Pb and Sn-3Ag-1.5Cu/Sn-3Ag-0.5Cu composite flip-chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy. Microelectron. Reliab. 47, 1273 (2007).CrossRefGoogle Scholar
17.Siewert, T., Liu, S., Smith, D.R., and Madeni, J.C.: Database for Solder Properties with Emphasis on New Lead-free Solders (National Institute of Standards and Technology & Colorado School of Mines, Colorado, 2002), p. 36.Google Scholar
18.Yang, S.C., Ho, C.E., Chang, C.W., and Kao, C.R.: Massive spalling of intermetallic compounds in solder-substrate reactions due to limited supply of the active element. J. Appl. Phys. 101, 084911 (2007).CrossRefGoogle Scholar
19.Chang, C.W., Ho, C.E., Yang, S.C., and Kao, C.R.: Kinetics of AuSn4 migration in lead-free solders. J. Electron. Mater. 35, 1948 (2006).CrossRefGoogle Scholar
20.Jang, J.W., Kim, P.G., Tu, K.N., Frear, D.R., and Thompson, P.: Solder reaction-assisted crystallization of electroless Ni-P under bump metallization in low cost flip chip technology. J. Appl. Phys. 85, 8456 (1999).CrossRefGoogle Scholar