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Defect mapping of a synthetic diamond single crystal by cathodoluminescence spectroscopy

Published online by Cambridge University Press:  03 March 2011

Lawrence H. Robins  and
David R. Black
Lawrence H. Robins
Affiliation:
Ceramics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899
David R. Black
Affiliation:
Ceramics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899
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Abstract

Cathodoluminescence (CL) spectroscopy in a scanning electron microscope was used to identify and to map the spatial distribution of luminescent defects in a synthetic diamond single crystal. Several defect CL bands were observed in the 1.5-3.5 eV region: (i) a band with a zero-phonon line at 2.156 eV, attributed to a center containing nitrogen and atomic vacancies; (ii) a broadband centered at ∼2.2 eV, tentatively attributed to a boron-containing center; (iii) a doublet line at 2.33 eV, attributed to a nitrogen-containing center; (iv) a zero-phonon line at 2.555 eV, attributed to a nickel-containing center; (v) a broadband centered at ∼2.85 eV, attributed to a dislocation-related center; and (vi) a zero-phonon line at 3.188 eV, attributed to a center containing nitrogen and a carbon interstitial. Lines due to free and acceptor-bound excitons were observed in the 5.0-5.4 eV region. The spatial variation of the CL was examined in the vicinity of regions of relatively high dislocation density (∼106 dislocations cm−2), which had been found in a previous x-ray diffraction imaging experiment. A quantitative analysis was made of the spatial variation of the band intensities. Upon moving from a relatively defect-free region to the center of a high dislocation density region, the intensities of defect bands (i) and (v) increased by very large factors (these bands were observed only within the high dislocation density regions); the intensity of defect band (vi) increased by a factor of ∼2; the acceptor-bound exciton intensity increased by a factor of 1.3; the intensities of defect bands (ii)-(iv) decreased by a factor of ∼2; and the free exciton intensity decreased by a factor of ∼7.5.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 5 , May 1994 , pp. 1298 - 1307
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1Tanner, B. K., X-Ray Diffraction Topography (Pergamon Press, Oxford, 1976).Google Scholar
2Black, D. R., Burdette, H. E., and Banholzer, W. E., Diamond and Related Mater. 2, 121 (1993).CrossRefGoogle Scholar
3Robins, L. H., Cook, L. P., Farabaugh, E. N., and Feldman, A., Phys. Rev. B 39, 13367 (1989).CrossRefGoogle Scholar
4Davies, G., in The Properties of Diamond, edited by Field, J. E. (Academic Press, San Diego, CA, 1979), p. 165.Google Scholar
5Collins, A. T., in Diamond Materials, edited by Purdes, A. J., Angus, J. C., Davis, R. F., Meyerson, B. M., Spear, K. E., and Yoder, M., Electrochem. Soc. Proc. Vol. 91–8 (The Electrochemical Society, 1991), p. 408.Google Scholar
6Ruan, J., Kobashi, K., and Choyke, W. J., Appl. Phys. Lett. 60, 3138 (1992).CrossRefGoogle Scholar
7Robins, L. H., Farabaugh, E. N., Feldman, A., and Cook, L. P., Phys. Rev. B 43, 9102 (1991).CrossRefGoogle Scholar
8Collins, A. T. and Lawson, S. C., J. Phys.: Condens. Matter 1, 6929 (1989).Google Scholar
9Kawarada, H., Yokota, Y., Mori, Y., Nishimura, K., and Hiraki, A., J. Appl. Phys. 67, 983 (1990).CrossRefGoogle Scholar
10Vavilov, V. S., Gippius, A. A., Zaitsev, A. M., Deryagin, B. V., Spitsyn, B. V., and Aleksenko, A. E., Fiz. Tekh. Poluprovodn. 14, 1811 (1980); [Sov. Phys. Semicond. 14, 1078 (1980)].Google Scholar
11Collins, A. T., Kamo, M., and Sato, Y., J. Phys. D 22, 1402 (1989).CrossRefGoogle Scholar
12Robins, L. H., Farabaugh, E. N., and Feldman, A., J. Mater. Res. 7, 394 (1992).CrossRefGoogle Scholar
13Collins, A. T., Kanda, H., and Burns, R. C., Philos. Mag. B 61, 797 (1990).CrossRefGoogle Scholar
14Yamamoto, N., Spence, J. C. H., and Fathy, D., Philos. Mag. B 49, 609 (1984).CrossRefGoogle Scholar
15Graham, R. J., Moustakas, T. D., and Disko, M. M., J. Appl. Phys. 69, 3212 (1991).CrossRefGoogle Scholar
16Graham, R. J. and Ravi, K. V., Appl. Phys. Lett. 60, 1310 (1992).CrossRefGoogle Scholar
17Collins, A. T. and Woods, G. S., J. Phys. C 20, L797 (1987).CrossRefGoogle Scholar
18Collins, A. T. and Robertson, S. H., J. Mater. Sci. Lett. 4, 681 (1985).CrossRefGoogle Scholar
19Dean, P. J. and Jones, I. H., Phys. Rev. 133A, 1698 (1964).CrossRefGoogle Scholar
20Dean, P. J., Lightowlers, E. C., and Wight, D. R., Phys. Rev. 140A, 352 (1965).CrossRefGoogle Scholar
21Kawarada, H., Yokota, Y., and Hiraki, A., Appl. Phys. Lett. 57, 1889 (1990).CrossRefGoogle Scholar
22Kawarada, H., Yokota, Y., Matsuyama, H., Sogi, T., and Hiraki, A., in Diamond Materials, edited by Purdes, A. J., Angus, J. C., Davis, R. F., Meyerson, B. M., Spear, K. E., and Yoder, M., Electrochem. Soc. Proc. Vol. 91–8 (The Electrochemical Society, 1991), p. 420.Google Scholar