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Dependence of fracture stress on applied stress rate in a Yb2O3–SiO2-doped hot-pressed silicon nitride ceramic

Published online by Cambridge University Press:  31 January 2011

Shuqi Guo*
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Naoto Hirosaki
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Yoshinobu Yamamoto
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Toshiyuki Nishimura
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Mamoru Mitomo
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
*
a) Address all correspondence to this author. e-mail: GUO.Shuqi@nims.go.jp
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Abstract

High-temperature fracture behavior of a Yb2O3–SiO2–doped hot-pressed silicon nitride (Si3N4) ceramic was investigated in four-point flexure between 1000 and 1500 °C at five crosshead speeds, using the specimens precracked with three indentation loads. Above 1000 °C, a temperature and stressing rate dependence of fracture stress was seen. At 1200 °C the fracture stress of the precracked specimens increased with decreasing stressing rates due to a toughening effect, the absence of slow crack growth (SCG). However, at 1400 and 1500 °C the fracture stress decreased with decreasing stressing rate. In particular, this dependence was stronger at 1500 °C than at 1400 °C. The SCG was observed only in the specimens precracked with indentation loads of 98 and 196 N. This crack extended with increasing test temperature and/or decreasing stressing rate. The dependence of fracture stress on stressing rate was attributed to a SCG behavior at higher temperatures.

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Articles
Copyright
Copyright © Materials Research Society 2001

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