Hostname: page-component-68945f75b7-k8jzq Total loading time: 0 Render date: 2024-09-03T22:18:27.452Z Has data issue: false hasContentIssue false
  • English
  • Français

Diamond synthesis from vapor phase and its growth process

Published online by Cambridge University Press:  31 January 2011

Nobuo Setaka
Nobuo Setaka
Affiliation:
National Institute for Research in Inorganic Materials, 1-1 Namiki Tsukuba City, Ibaraki 305, Japan
Get access

Abstract

Diamond synthesis from the vapor phase has been studied using hot filament assisted CVD, microwave plasma assisted CVD in an open system, and chemical transport process in a closed system using a gas mixture of hydrocarbon diluted with hydrogen gas. The deposited materials were identified as a cubic diamond with x-ray diffraction and Raman scattering measurement. The deposition process of diamond was considered on the basis of these experimental results and a review of the relevant field. The results suggest that the diamond synthesis proceeded by the deposition process, with the etching process operating simultaneously, and that atomic hydrogen played a very important role as the etching agent for non-diamond carbon. Also, the deposition process would be considered as the method that utilizes the bonding energy difference on each crystal surface of the diamond. The complicated problems on diamond synthesis originate from the fact that a third allotropic form exists in carbon, that is, the carbyne group.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 3 , June 1989 , pp. 664 - 670
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Eversole, W.G.U.S. Patents 3030187 3030188 (1962).Google Scholar
2Derjaguin, B.V.Fedossev, D.V.Lukyanovich, V. M.Spitsyn, B.V.Ryabov, V. A. and Lavrentyev, A. V.J. Cryst. Growth 2 380 (1968).CrossRefGoogle Scholar
3Angus, J. C.Will, H. A. and Stanko, W. S.J. Appl. Phys. 2 380 (1968).Google Scholar
4Spitsyn, B.V.Bouilv, L.L. and Derjaguin, B.V.J. Cryst. Growth 52 219 (1981).CrossRefGoogle Scholar
5Derjaguin, B. V. and Fedossev, D. V.Growth of Diamond and Graphite from the Gas Phase (Moscow, Jzd. Nauka, 1977).Google Scholar
6Matsumoto, S.Sato, Y.Tsutsumi, M. and Setaka, N.J. Mater. Sci. 17 3106 (1981).CrossRefGoogle Scholar
7Kamo, M.Sato, Y.Matsumoto, S. and Setaka, N.J. Cryst. Growth, Sci. 42 642 (1983).CrossRefGoogle Scholar
8Solin, S.A. and Ramdas, A.K.Phys. Rev. B1 1687 (1970).CrossRefGoogle Scholar
9Matsumoto, S.Morimoto, S. and Setaka, N.Yogyo-Kyokai Annual Meeting (1984).Google Scholar
10Heimann, R. B.Kleiman, J. and Salansky, N. M.Nature 306 164 (1983).CrossRefGoogle Scholar
11Whittaker, A. G.Science 200 763 (1978).CrossRefGoogle Scholar
12Wada, N.Gaczi, P. J. and Solin, S. J.J. Non-Cryst. Solids 35-36 543 (1980).CrossRefGoogle Scholar
13Vora, H. and Moravec, T. J.J. Appl. Phys. 52 6151 (1981).CrossRefGoogle Scholar
14Kuzmany, H.Phys. Status Solidi B97 521 (1981).Google Scholar
15King, A.B. and Wise, H.J. Phys. Chem. 67 1163 (1963).CrossRefGoogle Scholar
16“Selected Value of Chemical Thermodynamical Properties,” National Bureau of Standards, Technical Note, 270–273 (1968).Google Scholar
17Davies, G. and Evans, T.Proc. R. Soc. London, Ser. A328 413 (1972).Google Scholar
18Sawabe, A. and Inuzuka, T.Appl. Phys. Lett. 46 146 (1985).CrossRefGoogle Scholar
19Yugo, S.Kanai, H.Tanaka, H.Kimura, T.Yukizane, S.Ono, A. and Adachi, Y.Tanso Gatsukai Annual Meeting (1980).Google Scholar
20Goodyear, C. C. and Engel, A. V.Proc. Phys. Soc. 79 732 (1962).CrossRefGoogle Scholar