Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-12T20:41:08.205Z Has data issue: false hasContentIssue false
  • English
  • Français

The effect of Cu on morphological instabilities in thin Al/Pt films

Published online by Cambridge University Press:  31 January 2011

E.G. Colgan  and
B. Blanpain
E.G. Colgan
Affiliation:
IBM East Fishkill, General Technology Division, Hopewell Junction, New York 12533–0999
B. Blanpain
Affiliation:
Department of Metallurgy and Materials Engineering, KULeuven, de Croylaan 2, B-3001 Heverlee, Belgium
Get access

Abstract

Al films deposited on Pt layers developed voids after annealing at 250 °C. The amount of Al in the area surrounding the voids increased relative to the as-deposited film. The addition of 1 or 4% Cu to the Al suppressed the void formation and lateral Al migration. The void formation is related to compound formation with the Pt. The addition of Cu to the Al did not modify the Pt2Al3 formation.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 5 , May 1992 , pp. 1093 - 1095
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Jackson, M. S. and Li, C. Y., Acta Metall. 30, 1993 (1982).CrossRefGoogle Scholar
2.Hinode, K., Owada, N., Nishida, T., and Mukai, K., J. Vac. Sci. Technol. B 5, 518 (1987).CrossRefGoogle Scholar
3.Murarka, S. P., Blech, I. A., and Levinstein, H. J., J. Appl. Phys. 47, 5175 (1976).CrossRefGoogle Scholar
4.Colgan, E. G., Li, C-Y., and Mayer, J. W., Appl. Phys. Lett. 51, 424 (1987).CrossRefGoogle Scholar
5.Colgan, E. G., Li, C-Y., and Mayer, J. W., J. Mater. Res. 2, 557 (1987).CrossRefGoogle Scholar
6.Ma, E. and Nicolet, M-A., Phys. Status Solidi (A) 110, 509 (1988).CrossRefGoogle Scholar
7.Legresy, J. M., Blanpain, B., and Mayer, J. W., J. Mater. Res. 3, 884 (1988).CrossRefGoogle Scholar
8.Blanpain, B., Allen, L. H., J-Legresy, M., and Mayer, J. W., Phys. Rev. B 39, 13,067 (1989).CrossRefGoogle Scholar
9.Colgan, E. G., J. Appl. Phys. 62, 1224 (1987).CrossRefGoogle Scholar
10.Wittmer, M., LeGoues, F., and H-Huang, C. W., J. Electrochera. Soc. 132, 1450 (1985).CrossRefGoogle Scholar
11.Wittmer, M., Huang, H-C. W., and LeGoues, F., Philos. Mag. A 53, 687 (1986).CrossRefGoogle Scholar
12.Doolittle, L. R., Nucl. Instrum. Methods B 9, 344 (1985).CrossRefGoogle Scholar