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The effect of Cu on morphological instabilities in thin Al/Pt films

Published online by Cambridge University Press:  31 January 2011

E.G. Colgan  and
B. Blanpain
E.G. Colgan
Affiliation:
IBM East Fishkill, General Technology Division, Hopewell Junction, New York 12533–0999
B. Blanpain
Affiliation:
Department of Metallurgy and Materials Engineering, KULeuven, de Croylaan 2, B-3001 Heverlee, Belgium
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Abstract

Al films deposited on Pt layers developed voids after annealing at 250 °C. The amount of Al in the area surrounding the voids increased relative to the as-deposited film. The addition of 1 or 4% Cu to the Al suppressed the void formation and lateral Al migration. The void formation is related to compound formation with the Pt. The addition of Cu to the Al did not modify the Pt2Al3 formation.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 5 , May 1992 , pp. 1093 - 1095
Copyright
Copyright © Materials Research Society 1992

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