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Effects of homoepitaxial surfaces and interface compounds on the in-plane epitaxy of YBCO films on yttria-stabilized zirconia

Published online by Cambridge University Press:  31 January 2011

D.K. Fork ,
S.M. Garrison ,
Marilyn Hawley  and
T.H. Geballe
D.K. Fork
Affiliation:
Department of Applied Physics, Stanford University, Stanford, California 94305, and Xerox Palo Alto Research Center, Palo Alto, California 94304
S.M. Garrison
Affiliation:
Conductus Inc., Sunnyvale, California 94086
Marilyn Hawley
Affiliation:
Los Alamos National Laboratory, Los Alamos, New Mexico 87545
T.H. Geballe
Affiliation:
Department of Applied Physics, Stanford University, Stanford, California 94305
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Abstract

Control of the in-plane epitaxial alignment of c-axis YBa2Cu3O7−δ (YBCO) films on yttria-stabilized zirconia (YSZ) substrates is necessary for achieving optimal transport properties. We have used pulsed laser deposition to grow homoepitaxial YSZ and heteroepitaxial CeO2 on YSZ single crystal substrates. This procedure dramatically improves the epitaxy of YBCO and reduces the number of low and high angle grain boundaries. We have also studied the effects of preparing the YSZ growth surface with approximately monolayer amounts of CuO, Y2O3, BaO, and BaZrO3 to determine the effects these compositional variations have on the subsequent YBCO epitaxy. CuO, Y2O3, and BaZrO3 induce an in-plane crystallography of YBCO distinct from that initiated with BaO. Both homoepitaxy and monolayer depositions may be carried out in situ and are simple and effective for controlling the epitaxy and electrical properties of YBCO on YSZ. The effects of substrate temperature, oxygen pressure, and yttria content have also been studied.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 7 , July 1992 , pp. 1641 - 1651
Copyright
Copyright © Materials Research Society 1992

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