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Growth of aligned multiwalled carbon nanotubes on bulk copper substrates by chemical vapor deposition

Published online by Cambridge University Press:  23 February 2011

Ge Li ,
Supriya Chakrabarti ,
Mark Schulz  and
Vesselin Shanov
Ge Li*
Affiliation:
Department of Chemical and Materials Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0012
Supriya Chakrabarti
Affiliation:
Department of Chemical and Materials Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0012
Mark Schulz
Affiliation:
Department of Mechanical Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0072
Vesselin Shanov*
Affiliation:
Department of Chemical and Materials Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0012
*
a) e-mail: lucygelee@yahoo.com
b) e-mail: vesselin.shanov@UC.edu
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Abstract

Successful growth of vertically aligned carbon nanotube (CNT) arrays on copper substrate by thermal chemical vapor deposition is reported in this paper. The effects of Ti, Ni, and Ni–Cr intermediate layers have been studied to eliminate cracking of the copper surface during the synthesis of CNTs. It was found that these intermediate layers play a critical role in achieving vertical alignment of CNTs on copper substrates. The effects of other reaction parameters such as flow rate of ethylene, concentration of water vapor, and deposition temperature have also been studied. Scanning electron microscopy, transmission electron microscopy, and micro-Raman spectroscopy were used to evaluate the quality and nature of the CNT formed.

Keywords

CatalyticChemical vapor deposition (CVD) (deposition)
Type
Articles
Information
Journal of Materials Research , Volume 24 , Issue 9 , September 2009 , pp. 2813 - 2820
Copyright
Copyright © Materials Research Society 2009

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