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Growth of cubic boron nitride films on tungsten carbide substrates by direct current jet plasma chemical vapor deposition

Published online by Cambridge University Press:  03 March 2011

J. Yu  and
S. Matsumoto
J. Yu
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
S. Matsumoto*
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
*
a) Address all correspondence to this author. e-mail: seiichiro.matsumoto@nims.go.jp
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Abstract

Cubic boron nitride (cBN) film was deposited on Co-containing WC substrates by dc jet plasma chemical vapor deposition from an Ar–N2–BF3–H2 gas system. The formation of cobalt nitrides was observed at interface, and the hindrance of Co on cBN growth was demonstrated. Growth temperature and etching treatment of the substrate before deposition influenced the cBN growth greatly. At 1050 °C, cBN films were obtained on etched substrates but not on unetched substrates. At 1090 °C, cBN films were not obtained even on etched substrates. At 960 °C, cBN films deposited even on unetched substrate but the films always peeled off after exposing to air. The film quality of cBN deposited at 960 °C is better than that deposited at 1050 °C.

Keywords

Chemical vapor deposition (CVD)Thin filmAdhesion
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 5 , May 2004 , pp. 1408 - 1412
Copyright
Copyright © Materials Research Society 2004

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