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Insulator-metal transitions at microindentations

Published online by Cambridge University Press:  31 January 2011

John J. Gilman
John J. Gilman
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, California 94720
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Abstract

For all tetrahedrally bonded semiconductors (five group IV plus nine III-V compounds and nine II-VI compounds), it is shown that the critical pressure needed to transform the semiconductor into the metallic state correlates with the microindentation hardness number. The same is done for five alkaline earth oxides. The critical transition pressures have been estimated from Herzfeld's theory—that is, from the compression at which the dielectric constant diverges to infinity. Experimental transition pressures also correlate with hardness numbers, and they correlate with the activation energies for dislocation motion. Since these transitions are electronic they can be influenced by photons, doping (donors enhance while acceptors inhibit them), currents, surface states, etc. Microindentation also provides a simple experimental tool for observing pressure and/or shear induced transformations.

Type
Communications
Information
Journal of Materials Research , Volume 7 , Issue 3 , March 1992 , pp. 535 - 538
Copyright
Copyright © Materials Research Society 1992

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References

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