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Interfacial reactions in the Sn–20 at.% In/Cu and Sn–20 at.% In/Ni couples at 160 °C

Published online by Cambridge University Press:  01 July 2006

Shih-kang Lin
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsin-chu, Taiwan 300, Republic of China
Sinn-wen Chen*
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsin-chu, Taiwan 300, Republic of China
*
a) Address all correspondence to this author.e-mail: swchen@che.nthu.edu.tw
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Abstract

Sn–In alloys are promising low-melting-point Pb-free solders. Cu and Ni are common substrates in the electronic products. This study examines the interfacial reactions in the Sn–20 at.% In(γ–InSn4)/Cu and Sn–20 at.% In/Ni couples at 160 °C. Only the η–Cu6Sn5 phase layer is formed in the Sn–20 at.% In/Cu couple, and the layer grows thicker with longer reaction time. The reaction path is γ–InSn4/η–Cu6Sn5/Cu. A peculiar phenomenon with the bulging of the couple near the Ni substrate is found in the Sn–20 at.% In/Ni couple. A liquid phase is formed by interfacial reaction in the solid/solid Sn–20 at.% In/Ni couple at 160 °C, and the reaction path is γ–InSn4/liquid/δ–Ni3Sn4 + liquid/(δ–Ni3Sn4)/Ni. Usually Ni has a slower reaction rate with solders; however, the consumption rates of Ni substrate are much higher than those of Cu substrate in this study when they are in contact with the Sn–20 at.% In alloy at 160 °C due to the formation of the liquid phase in the Sn–20 at.% In/Ni couple.

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Copyright
Copyright © Materials Research Society 2006

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