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Internal gettering heat treatments and oxygen precipitation in epitaxial silicon wafers

Published online by Cambridge University Press:  31 January 2011

W. Wijaranakula ,
P.M. Burke  and
L. Forbes
W. Wijaranakula
Affiliation:
Silicon Materials Laboratory, Department of Electrical and Computer Engineering, and Department of Mechanical Engineering, Oregon State University, Corvallis, Oregon 97331
P.M. Burke
Affiliation:
Silicon Materials Laboratory, Department of Electrical and Computer Engineering, and Department of Mechanical Engineering, Oregon State University, Corvallis, Oregon 97331
L. Forbes
Affiliation:
Silicon Materials Laboratory, Department of Electrical and Computer Engineering, and Department of Mechanical Engineering, Oregon State University, Corvallis, Oregon 97331
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Abstract

As-received P/P + (100) epitaxial silicon wafers were heat treated using the one-, two-, and three-step internal gettering heat treatment cycles in wet oxygen, dry oxygen, and nitrogen ambients. The results indicate that ambients have an effect on the growth of bulk defects and denuded zone formation in the epitaxial silicon wafers.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 5 , October 1986 , pp. 693 - 697
Copyright
Copyright © Materials Research Society 1986

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References

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