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Microstructure and properties of PbZr0.6Ti0.4O3 and PbZrO3 thin films deposited on template layers

Published online by Cambridge University Press:  31 January 2011

R. E. Koritala ,
M. T. Lanagan ,
N. Chen ,
G. R. Bai ,
Y. Huang  and
S. K. Streiffer
R. E. Koritala
Affiliation:
Energy Technology Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
M. T. Lanagan
Affiliation:
Energy Technology Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
N. Chen
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
G. R. Bai
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
Y. Huang
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
S. K. Streiffer
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
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Abstract

Polycrystalline Pb(ZrxTi1−x)O3 thin films with x = 0.6 and 1.0 were deposited at low temperatures (450–525 °C) on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. The films were characterized by x-ray diffraction, electron microscopy, and electrical measurements. The texture of the films could be improved by using one of two template layers: PbTiO3 or TiO2. Electrical properties, including dielectric constants, loss tangents, polarization, coercive field, and breakdown field, were also examined. PbZrO3 films on Pt/Ti/SiO2/Si with a pseudocubic (110) orientation exhibited an electric-field-induced transformation from the antiferroelectric phase to the ferroelectric phase. The effect of varying processing conditions on the microstructure and electrical properties of the films is discussed.

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Articles
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Journal of Materials Research , Volume 15 , Issue 9 , September 2000 , pp. 1962 - 1971
Copyright
Copyright © Materials Research Society 2000

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