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Nanoimprinted complementary organic electronics: Single transistors and inverters

Published online by Cambridge University Press:  20 September 2011

Thomas Rothländer ,
Ursula Palfinger ,
Barbara Stadlober ,
Anja Haase ,
Herbert Gold ,
Christian Palfinger ,
Johanna Kraxner ,
Georg Jakopic ,
Paul Hartmann  and
Gerhard Domann
Thomas Rothländer*
Affiliation:
MATERIALS—Institute for Surface Technologies and Photonics, JOANNEUM RESEARCH, Forschungsgesellschaft mbH, Weiz 8160, Austria
Ursula Palfinger
Affiliation:
MATERIALS—Institute for Surface Technologies and Photonics, JOANNEUM RESEARCH, Forschungsgesellschaft mbH, Weiz 8160, Austria
Barbara Stadlober
Affiliation:
MATERIALS—Institute for Surface Technologies and Photonics, JOANNEUM RESEARCH, Forschungsgesellschaft mbH, Weiz 8160, Austria
Anja Haase
Affiliation:
MATERIALS—Institute for Surface Technologies and Photonics, JOANNEUM RESEARCH, Forschungsgesellschaft mbH, Weiz 8160, Austria
Herbert Gold
Affiliation:
MATERIALS—Institute for Surface Technologies and Photonics, JOANNEUM RESEARCH, Forschungsgesellschaft mbH, Weiz 8160, Austria
Christian Palfinger
Affiliation:
MATERIALS—Institute for Surface Technologies and Photonics, JOANNEUM RESEARCH, Forschungsgesellschaft mbH, Weiz 8160, Austria
Johanna Kraxner
Affiliation:
MATERIALS—Institute for Surface Technologies and Photonics, JOANNEUM RESEARCH, Forschungsgesellschaft mbH, Weiz 8160, Austria
Georg Jakopic
Affiliation:
MATERIALS—Institute for Surface Technologies and Photonics, JOANNEUM RESEARCH, Forschungsgesellschaft mbH, Weiz 8160, Austria
Paul Hartmann
Affiliation:
MATERIALS—Institute for Surface Technologies and Photonics, JOANNEUM RESEARCH, Forschungsgesellschaft mbH, Weiz 8160, Austria
Gerhard Domann
Affiliation:
MATERIALS—Institute for Surface Technologies and Photonics, JOANNEUM RESEARCH, Forschungsgesellschaft mbH, Weiz 8160, Austria
*
a)Address all correspondence to this author. e-mail: thomas.rothlaender@joanneum.at
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Abstract

We demonstrate the fabrication of shadow mask (SM) patterned as well as nanoimprint lithography (NIL) patterned organic transistors and integrated complementary organic inverters (ICOIs). As active layers pentacene (p-type) and either PTCDI-C13H27 or F16CuPc (n-type) were used. The SM-patterned ICOIs with a staggered bottom gate configuration, a nanocomposite dielectric and both active layer combinations (pentacene/PTCDI C13H27, pentacene/F16CuPc) exhibited high performance (3 V operation voltage; gain around 60; high level 3 V; low level 5 mV; noise margin 0.9 V). Flexible ICOIs with transistor channel lengths of 900 nm were successfully fabricated by NIL, using a benzocyclobutene derivative as dielectric. Because of the process inherent coplanar bottom gate configuration, F16CuPc was used. The ICOIs showed proper functionality (3 V operation voltage; gain around 5; high level 2.9 V; low level 25 mV). To our knowledge, this study demonstrates the first complementary submicron inverters based on fully R2R compatible imprint processes.

Keywords

OrganicNanostructureElectronic structure
Type
Invited Feature Papers
Information
Journal of Materials Research , Volume 26 , Issue 19 , 14 October 2011 , pp. 2470 - 2478
Copyright
Copyright © Materials Research Society 2011

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