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Optical and electrical properties of Ge10+xSe40Te50−x thin film

Published online by Cambridge University Press:  31 January 2011

S. A. Fayek ,
M. El-Ocker  and
A. S. Hassanien
S. A. Fayek
Affiliation:
Solid State Department, National Center for Radiation Research and Technology (NCRRT), Nasr City, Cairo, Egypt
M. El-Ocker
Affiliation:
Physics Department, Faculty of Science, Al-Azhar University, Cairo, Egypt
A. S. Hassanien
Affiliation:
Basic Science Department, Faculty of Engineering Shoubra, Benha Branch, Zagazig University, Benha, Egypt
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Abstract

Thin films with thickness 100 nm of Ge10+xSe40Te50−x (x ranging from 0.0 to 16.65 at.%) were formed by vacuum deposition at 1.33 × 10−4 Pa. The change in electrical resistivity of the films has been measured using the coplanar method. The measurements have been carried out in a temperature range between 400 and 142 K. The values of the electrical activation energies lie in the range of 0.18–0.38 eV. The optical absorption behavior of these ternary thin films was studied from the reflection and transmission. The optical band gap was found to be in the range of 0.90–1.11 eV and arose from indirect transitions. On the other hand, the width of the band tail Ee was found in the range 0.19–0.32 eV and exhibits opposite behavior. This behavior is believed to be associated with a defected bond of Te–Te and a cohesive energy (CE).

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 6 , June 2001 , pp. 1549 - 1553
Copyright
Copyright © Materials Research Society 2001

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