Hostname: page-component-784d4fb959-splj4 Total loading time: 0 Render date: 2025-07-14T23:02:36.579Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical and structural properties of semi-insulating polycrystalline silicon thin films

Published online by Cambridge University Press:  03 March 2011

G. Compagnini ,
S. Lombardo ,
R. Reitano  and
S.U. Campisano
G. Compagnini
Affiliation:
Istituto di Metodologie e Tecnologie per la Microelettronica, CNR, Stradale Primosole 50, 95121 Catania, Italy
S. Lombardo
Affiliation:
Dipartimento di Fisica dell'Universita' di Catania, Corso Italia 57, 95129 Catania, Italy
R. Reitano
Affiliation:
Dipartimento di Fisica dell'Universita' di Catania, Corso Italia 57, 95129 Catania, Italy
S.U. Campisano
Affiliation:
Dipartimento di Fisica dell'Universita' di Catania, Corso Italia 57, 95129 Catania, Italy
Get access

Abstract

Optical properties of semi-insulating polycrystalline silicon (SIPOS) thin films containing 30 at. % oxygen atoms are investigated in the near ultraviolet, visible and infrared region to improve knowledge on the structure and chemical bonding of these mixtures. An effective medium approximation model is used for a microscopic investigation of the oxide species involved as a function of the annealing temperature (600–1200 °C). The results are compared with other optical spectroscopies (infrared and Raman) and with transmission electron microscopy to give a selected picture of the pure and oxide components.

Information

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 4 , April 1995 , pp. 885 - 890
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1Matsushita, T., Aoki, T., Ohtsu, T., Yamoto, H., Hayashi, H., Okayama, M., and Kawana, Y., Jpn. J. Appl. Phys. Suppl. 15, 35 (1976).CrossRefGoogle Scholar
2Yamaguchi, T., Seaward, K. L., Sachitano, J. L., Ritchie, D., and Seto, S., IEEE J. Solid State Circuits SC–13, 472 (1978).CrossRefGoogle Scholar
3Wong, J., Jefferson, D. A., Sparrow, T. G., Thomas, J. M., Milne, R. H., Howie, A., and Koch, E. F., Appl. Phys. Lett. 48, 65 (1986).CrossRefGoogle Scholar
4Olego, D. J. and Baumgart, H., J. Appl. Phys. 63, 2669 (1989).CrossRefGoogle Scholar
5Andra, W. G., Gotz, G., Hobert, H., Misyuchenko, V., Samnilov, V. A., and Stelmakh, V., Phys. Status Solidi A 110, 181 (1988).CrossRefGoogle Scholar
6McGinn, J. T. and Goodman, A. M., Appl. Phys. Lett. 34, 601 (1979).CrossRefGoogle Scholar
7Bruesch, P., Stockmeier, Th., Stucki, F., and Buffat, P. A., J. Appl. Phys. 73, 7677 (1993).CrossRefGoogle Scholar
8Lombardo, S., Campisano, S. U., and Baroetto, F., Appl. Phys. Lett. 63, 470 (1993).CrossRefGoogle Scholar
9Lombardo, S., Campisano, S. U., and Baroetto, F., Phys. Rev. B 47, 13561 (1993).CrossRefGoogle Scholar
10Lombardo, S., Campisano, S. U., van der Hoven, G. N., Cacciato, A., and Polman, A., Appl. Phys. Lett. 63, 1942 (1993).CrossRefGoogle Scholar
11Compagnini, G., Foti, G., Reitano, R., and Mondio, G., J. Non-Cryst. Solids 162, 237 (1993).CrossRefGoogle Scholar
12Palmer, K. F. and Williams, M. Z., Appl. Opt. 24, 1788 (1985).CrossRefGoogle Scholar
13Ho, J. H., Lee, C. L., Lei, T. F., and Chao, T. S., J. Opt. Soc. Am. A7, 196 (1990).CrossRefGoogle Scholar
14Aspnes, D. E., Thin Solid Films 89, 249 (1982).CrossRefGoogle Scholar
15Collins, R. W. and Cavese, J. M., J. Vac. Sci. Technol. A 5, 2797 (1987).CrossRefGoogle Scholar
16Bruggeman, D. A., Ann. Phys. (Leipzig) 24, 636 (1935).CrossRefGoogle Scholar
17Aspnes, D. E. and Theeten, J. B., J. Appl. Phys. 50, 4928 (1979).CrossRefGoogle Scholar
18Bruesch, P., Stockmeier, Th., Stucki, F., Buffat, P. A., and Lindner, J. K. N., J. Appl. Phys. 73, 7690 (1993).CrossRefGoogle Scholar
19Veprek, S., Sarott, F. A., and Iqbal, Z., Phys. Rev. B 36, 3344 (1987).CrossRefGoogle Scholar
20Kirk, C. K., Phys. Rev. 38, 1255 (1988).CrossRefGoogle Scholar
21Catalano, M., Kim, M. J., Carpenter, R. W., Das Chowdhury, K., and Wong, J., J. Mater. Res. 8, 2893 (1993).CrossRefGoogle Scholar