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Oxygen transport during annealing of Pb(Zr,Ti)O3 thin films in O2 gas and its effect on their conductivity

Published online by Cambridge University Press:  31 January 2011

F. Ayguavives ,
B. Agius ,
B. EaKim  and
I. Vickridge
F. Ayguavives*
Affiliation:
Department of Material Science and Engineering, North Carolina State University, Box 7919, Raleigh, North Carolina 27695
B. Agius
Affiliation:
Laboratoire de Physique des Gaz et des Plasmas (LPGP), Centre Universitaire, Bat 210, 91405 Orsay Cedex, France
B. EaKim
Affiliation:
Laboratoire Charles Fabry (IOTA), Centre universitaire BP 147, 91403 Orsay Cedex, France
I. Vickridge
Affiliation:
Groupe de Physique des Solides, Université Paris VII et VI, Paris, France
*
a)Address all correspondence to this author.tito.ayguavives@coherentinc.com
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Abstract

Lead zirconate titanate (PZT) thin films were deposited in a reactive argon/oxygen gas mixture by radio-frequency-magnetron sputtering. The use of a metallic target allows us to control the oxygen incorporation in the PZT thin film and also, using oxygen 18 as a tracer, to study the oxygen diffusion in the thin films. Electrical properties and crystallization were optimized with a 90-nm PZT thin film grown on RuO2 electrodes. These PZT films, annealed with a very modest thermal budget (550 °C) show very low leakage current densities (J = 2 × 10−8 A/cm2 at 1 V). In this article we show that a strong correlation exists between the oxygen composition in the PZT film and the leakage current density.

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Type
Articles
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Journal of Materials Research , Volume 16 , Issue 10 , October 2001 , pp. 3005 - 3008
Copyright
Copyright © Materials Research Society 2001

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