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Preparation and crystal properties of thin InSb films for highly sensitive magnetoresistance elements

Published online by Cambridge University Press:  31 January 2011

Masaaki Isai ,
Toshiaki Fukunaka  and
Masahide Ohshita
Masaaki Isai
Affiliation:
College of Engineering, Shizuoka University, Hamamatsu 432, Shizuoka, Japan
Toshiaki Fukunaka
Affiliation:
College of Engineering, Shizuoka University, Hamamatsu 432, Shizuoka, Japan
Masahide Ohshita
Affiliation:
College of Engineering, Shizuoka University, Hamamatsu 432, Shizuoka, Japan
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Abstract

High electron mobility thin InSb films were prepared on mica substrates by conventional vacuum evaporation of InSb to obtain highly sensitive magnetoresistance (MR) elements. The 0.15–0.5 μm thick InSb films were prepared in the present work. An optimum evaporation programming pattern was obtained. The crystal properties of these InSb films of 0.2–0.3 μm were investigated using a transmission electron microscope. It was shown that films thinner than 0.2 μm were semitransparent and consisted of [111] oriented single-crystal films. The 0.15–0.3 μm thick InSb films are therefore most useful for low-cost MR elements because of their high element resistance, small temperature coefficient of electron mobility, and high sensitivity.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 4 , August 1986 , pp. 547 - 551
Copyright
Copyright © Materials Research Society 1986

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References

1Wieder, H. H. and Clawson, A. R., Solid-state Electron. 8, 467 (1965).Google Scholar
2Wieder, H. H. and Clawson, A. R., Appl. Phys. Lett. 8, 239 (1966).CrossRefGoogle Scholar
3Teede, N.F., Solid-state Electron. 10, 1069 (1967).Google Scholar
4Clawson, A. R. and Wieder, H. H., Solid-state Electron. 10, 57 (1967).CrossRefGoogle Scholar
5Wieder, H. H. and Collins, D. A., Solid-state Electron. 11, 1093 (1968).Google Scholar
6Nadkami, G.S., Simoni, A., and Simmons, J. G., Solid-state Electron. 18, 393 (1975).Google Scholar
7Nadkarni, G. S., Thin Solid Films 87, 17 (1982).CrossRefGoogle Scholar
8Ohshita, M., Isai, M., and Tanaka, I., Trans. Inst. Elec. Eng. Jpn. 102A, 102 (1982) (in Japanese).Google Scholar
9Ohshita, M., Isai, M., and Tanaka, I., Rev. Sci. Instrum. 54, 146 (1983).Google Scholar
10Isai, M. and Ohshita, M., J. Appl. Phys. 55, 941 (1984).CrossRefGoogle Scholar
11Isai, M. and Ohshita, M., J. Appl. Phys. 58, 2686 (1985).Google Scholar
12Ohshita, M., Jpn. I. Appl. Phys. 10, 1365 (1971).Google Scholar
13Ohshita, M., Isai, M., and Tanaka, I., Proceedings of the 1st Sensor Symposium, June 1981, Tsukuba, Japan (Institute of Electrical Engineering, Japan, 1981), p. 289.Google Scholar
14Honig, R. E., RCA Rev. 12, 567 (1962).Google Scholar
15Isai, M., Fukunaka, T., and Ohshita, M., J. Appl. Phys. 59, 2845 (1986).CrossRefGoogle Scholar
16Wieder, H. H., J. Vac. Sci. Technol. 9, 1193 (1972).Google Scholar