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Properties of Indium Molybdenum Oxide Films Fabricated Via High-Density Plasma Evaporation at Room Temperature

Published online by Cambridge University Press:  03 March 2011

Shi-Yao Sun ,
Jow-Lay Huang  and
Ding-Fwu Lii
Shi-Yao Sun
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University,Tainan 701, Taiwan, Republic of China
Jow-Lay Huang
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University,Tainan 701, Taiwan, Republic of China
Ding-Fwu Lii
Affiliation:
Department of Electrical Engineering, Cheng Shiu University,Kaohsiung County 833, Taiwan, Republic of China
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Abstract

The goal of this study was to determine the scattering mechanisms and investigate the optoelectronic properties of indium molybdenum oxide (IMO) films. IMO films were deposited from an In2O3/MoO3 target with a weight ratio of 99/1, 95/5 and 90/10 via high-density plasma evaporation at room temperature. Based on the structural, electrical and optical properties, this study proposed that the neutral complex [(2Mo‧In)Oi″]x dominated at high doping content and high oxygen content, whereas ionized complex Mo‧‧‧In Oi″]‧ dominated at low doping level or low oxygen content. Uniform 99/1 IMO films with minimum resistivity of 3.56 × 10−4 Ω cm (corresponding to a mobility of 14.6 cm2V−1s−1 and carrier concentration of 14.3 × 1020 cm−3) and average visible transmittance of ∼85% were produced at an optimum oxygen content of ∼9%. Average optical transmittance exceeding 80% was demonstrated, and a structural change appeared at low oxygen contents.

Keywords

OptoelectronicPlasma depositionThin film
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 1 , January 2005 , pp. 247 - 255
Copyright
Copyright © Materials Research Society 2004

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