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Raman microprobe measurements of residual strains at the interfaces of Si on quartz

Published online by Cambridge University Press:  31 January 2011

Y. M. Cheong ,
H. L. Marcus  and
F. Aclar
Y. M. Cheong
Affiliation:
Center for the Materials Science and Engineering, The University of Texas at Austin. Austin, Texas 78712
H. L. Marcus
Affiliation:
Center for the Materials Science and Engineering, The University of Texas at Austin. Austin, Texas 78712
F. Aclar
Affiliation:
Instruments S. A., Inc., 6 Olsen Avenue, Edison, New Jersey 08820-2419
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Abstract

In order to quantitatively determine the residual stresses at the interfaces of laminate composite materials, a model involving exponential stress gradient in the substrate and no stress gradient in the film was derived. The measurements of residual strains at the Si/quartz interfaces using the Raman microprobe were compared to expected strains by the model. The model shows that a small volume of substrate near the interface about 2 times the film thickness was affected by the thermal mismatch of the two regions. Approximately 5–10 times higher residual strains were expected at the substrate-side interfaces compared to the measured results. This is explained by the experiments averaging along the probe thickness of about 10μm resolution. The recrystallization process of Si film by thermal annealing was also investigated using Raman spectroscopy.

Type
Articles
Information
Journal of Materials Research , Volume 2 , Issue 6 , December 1987 , pp. 902 - 909
Copyright
Copyright © Materials Research Society 1987

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References

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