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Recombination dynamics in planar and three-dimensional InGaN/GaN light emitting diode structures

Published online by Cambridge University Press:  20 June 2017

Angelina Vogt ,
Jana Hartmann ,
Hao Zhou ,
Matin Sadat Mohajerani ,
Sönke Fündling ,
Barbara Szafranski ,
Hergo-Heinrich Wehmann ,
Andreas Waag ,
Tobias Voss  and
Tilman Schimpke
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Angelina Vogt*
Affiliation:
Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, 38092 Braunschweig, Germany
Jana Hartmann
Affiliation:
Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, 38092 Braunschweig, Germany
Hao Zhou
Affiliation:
Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, 38092 Braunschweig, Germany
Matin Sadat Mohajerani
Affiliation:
Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, 38092 Braunschweig, Germany
Sönke Fündling
Affiliation:
Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, 38092 Braunschweig, Germany
Barbara Szafranski
Affiliation:
Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, 38092 Braunschweig, Germany
Hergo-Heinrich Wehmann
Affiliation:
Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, 38092 Braunschweig, Germany
Andreas Waag
Affiliation:
Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, 38092 Braunschweig, Germany
Tobias Voss
Affiliation:
Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, 38092 Braunschweig, Germany
Tilman Schimpke
Affiliation:
OSRAM Opto Semiconductors GmbH, 93055 Regensburg, Germany
Adrian Avramescu
Affiliation:
OSRAM Opto Semiconductors GmbH, 93055 Regensburg, Germany
Martin Strassburg
Affiliation:
OSRAM Opto Semiconductors GmbH, 93055 Regensburg, Germany
*
a) Address all correspondence to this author. e-mail: a.vogt@tu-bs.de
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Abstract

The spectrally and temporally resolved luminescence of three-dimensional (3D) InGaN/GaN microrods and planar light emitting diode (LED) structures is studied for different energy densities of fs-laser excitation pulses and for different sample temperatures. We find an energy density threshold above which irreversible modifications of the structures take place, which leads to a decrease of the luminescence intensity and a change in the intensity ratio of the GaN to the InGaN luminescence. Due to the quantum confined Stark effect, a biexponential decay characteristic is found in the planar structure, while the 3D microrods with nonpolar InGaN quantum wells on their sidewalls show a monoexponential decay of the InGaN luminescence. For both structures, the decay of the luminescence becomes faster with increasing energy density per pulse. However, the luminescence of the planar LED decays faster with increasing temperature, while the opposite trend is found for the 3D sample.

Keywords

luminescencecore–shellIII–V
Type
Invited Papers
Information
Journal of Materials Research , Volume 32 , Issue 13 , 14 July 2017 , pp. 2456 - 2463
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Copyright
Copyright © Materials Research Society 2017 

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Footnotes

Contributing Editor: Winston V. Schoenfeld

References

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