Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-18T07:09:57.116Z Has data issue: false hasContentIssue false
  • English
  • Français

Recombination dynamics in planar and three-dimensional InGaN/GaN light emitting diode structures

Published online by Cambridge University Press:  20 June 2017

Angelina Vogt ,
Jana Hartmann ,
Hao Zhou ,
Matin Sadat Mohajerani ,
Sönke Fündling ,
Barbara Szafranski ,
Hergo-Heinrich Wehmann ,
Andreas Waag ,
Tobias Voss  and
Tilman Schimpke
...Show all authors
Angelina Vogt*
Affiliation:
Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, 38092 Braunschweig, Germany
Jana Hartmann
Affiliation:
Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, 38092 Braunschweig, Germany
Hao Zhou
Affiliation:
Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, 38092 Braunschweig, Germany
Matin Sadat Mohajerani
Affiliation:
Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, 38092 Braunschweig, Germany
Sönke Fündling
Affiliation:
Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, 38092 Braunschweig, Germany
Barbara Szafranski
Affiliation:
Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, 38092 Braunschweig, Germany
Hergo-Heinrich Wehmann
Affiliation:
Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, 38092 Braunschweig, Germany
Andreas Waag
Affiliation:
Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, 38092 Braunschweig, Germany
Tobias Voss
Affiliation:
Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, 38092 Braunschweig, Germany
Tilman Schimpke
Affiliation:
OSRAM Opto Semiconductors GmbH, 93055 Regensburg, Germany
Adrian Avramescu
Affiliation:
OSRAM Opto Semiconductors GmbH, 93055 Regensburg, Germany
Martin Strassburg
Affiliation:
OSRAM Opto Semiconductors GmbH, 93055 Regensburg, Germany
*
a) Address all correspondence to this author. e-mail: a.vogt@tu-bs.de
Get access

Abstract

The spectrally and temporally resolved luminescence of three-dimensional (3D) InGaN/GaN microrods and planar light emitting diode (LED) structures is studied for different energy densities of fs-laser excitation pulses and for different sample temperatures. We find an energy density threshold above which irreversible modifications of the structures take place, which leads to a decrease of the luminescence intensity and a change in the intensity ratio of the GaN to the InGaN luminescence. Due to the quantum confined Stark effect, a biexponential decay characteristic is found in the planar structure, while the 3D microrods with nonpolar InGaN quantum wells on their sidewalls show a monoexponential decay of the InGaN luminescence. For both structures, the decay of the luminescence becomes faster with increasing energy density per pulse. However, the luminescence of the planar LED decays faster with increasing temperature, while the opposite trend is found for the 3D sample.

Keywords

luminescencecore–shellIII–V
Type
Invited Papers
Information
Journal of Materials Research , Volume 32 , Issue 13 , 14 July 2017 , pp. 2456 - 2463
Check for updates
Copyright
Copyright © Materials Research Society 2017 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

Contributing Editor: Winston V. Schoenfeld

References

REFERENCES

Krames, M.R., Shchekin, O.B., Mueller-Mach, R., Mueller, G.O., Zhou, L., Harbers, G., and Craford, M.G.: Status and future of high-power light-emitting diodes for solid-state lighting. J. Disp. Technol. 3, 160–175 (2007).Google Scholar
Waag, A., Wang, X., Fündling, S., Ledig, J., Erenburg, M., Neumann, R., Al Suleiman, M., Merzsch, S., Wei, J.D., Li, S., Wehmann, H-H., Bergbauer, W., Straßburg, M., Trampert, A., Jahn, U., and Riechert, H.: The nanorod approach: GaN NanoLEDs for solid state lighting. Phys. Status Solidi C 8, 2296–2301 (2011).Google Scholar
Mandl, M., Wang, X., Schimpke, T., Kölper, C., Binder, M., Ledig, J., Waag, A., Kong, X., Trampert, A., Bertram, F., Christen, J., Barbagini, F., Calleja, E., and Strassburg, M.: Group III nitride core–shell nano- and microrods for optoelectronic applications. Phys. Status Solidi RRL 7, 800–814 (2013).Google Scholar
Hong, Y.J., Lee, C.H., Yoon, A., Kim, M., Seong, H.K., Chung, H.J., Sone, C., Park, Y.J., and Yi, G.C.: Visible-color-tunable light-emitting diodes. Adv. Mater. 23, 3284–3288 (2011).Google Scholar
Jung, B.O., Bae, S., Lee, S., Kim, S.Y., Lee, J.Y., Honda, Y., and Amano, H.: Emission characteristics of InGaN/GaN core–shell nanorods embedded in a 3D light-emitting diode. Nanoscale Res. Lett. 11, 215 (2016).Google Scholar
Takeuchi, T., Sota, S., Katsuragawa, M., Komori, M., Takeuchi, H., Amano, H., and Akasaki, I.: Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells. Jpn. J. Appl. Phys. 36, L382–L385 (1997).Google Scholar
Waltereit, P., Brandt, O., Trampert, A., Grahn, H.T., Menniger, J., Ramsteiner, M., Reiche, M., and Ploog, K.H.: Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes. Nature 406, 865–868 (2000).Google Scholar
Langer, T., Klisch, M., Alexej Ketzer, F., Jönen, H., Bremers, H., Rossow, U., Meisch, T., Scholz, F., and Hangleiter, A.: Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells. Phys. Status Solidi B 253, 133–139 (2016).Google Scholar
Seo Im, J., Kollmer, H., Off, J., Sohmer, A., Scholz, F., and Hangleiter, A.: Reduction of oscillator strength due to piezoelectric fields in GaN/Al x Ga1−x N quantum wells. Phys. Rev. B: Condens. Matter Mater. Phys. 57, R9435 (1998).Google Scholar
Kölper, C., Sabathil, M., Römer, F., Mandl, M., Strassburg, M., and Witzigmann, B.: Core–shell InGaN nanorod light emitting diodes: Electronic and optical device properties. Phys. Status Solidi A 209, 2304–2312 (2012).Google Scholar
Kim, T., Kim, H.S., Hetterich, M., Jones, D., Girkin, J.M., Bente, E., and Dawson, M.D.: Femtosecond laser machining of gallium nitride. Mater. Sci. Eng., B 82, 262–264 (2001).Google Scholar
Chu, C.F., Lee, C.K., Yu, C.C., Wang, Y.K., Tasi, J.Y., Yang, C.R., and Wang, S.C.: High etching rate of GaN films by KrF excimer laser. Mater. Sci. Eng., B 82, 42–44 (2001).CrossRefGoogle Scholar
Schneider, A.: Structuring of zinc oxide and gallium nitride with femtosecond laser pulses: ablation, surface structures and optical properties. PhD Dissertation, University Bremen, Department of Physics and Electrical Engineering, 2015.Google Scholar
Feldmann, J., Peter, G., Göbel, E.O., Dawson, P., Moore, K., Foxon, C., and Elliott, R.J.: Linewidth dependence of radiative exciton lifetimes in quantum wells. Phys. Rev. Lett. 59, 2337–2340 (1987).Google Scholar
Andreani, L.C., Tassone, F., and Bassani, F.: Radiative lifetime of free excitons in quantum wells. Solid State Commun. 77, 641–645 (1991).Google Scholar
Lefebvre, P., Allègre, J., Gil, B., Kavokine, A., Mathieu, H., Kim, W., Salvador, A., Botchkarev, A., and Morkoç, H.: Recombination dynamics of free and localized excitons in GaN/Ga0.93Al0.07N quantum wells. Phys. Rev. B: Condens. Matter Mater. Phys. 57, R9447–R9450 (1998).Google Scholar
Rosales, D., Bretagnon, T., Gil, B., Kahouli, A., Brault, J., Damilano, B., Massies, J., Durnev, M.V., and Kavokin, A.V.: Excitons in nitride heterostructures: From zero- to one-dimensional behavior. Phys. Rev. B: Condens. Matter Mater. Phys. 88, 1–7 (2013).CrossRefGoogle Scholar
Marcinkevičius, S., Kelchner, K.M., Kuritzky, L.Y., Nakamura, S., Denbaars, S.P., and Speck, J.S.: Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells. Appl. Phys. Lett. 103, 1–6 (2013).Google Scholar
Wang, X., Li, S., Mohajerani, M.S., Ledig, J., Wehmann, H-H., Mandl, M., Strassburg, M., Steegmüller, U., Jahn, U., Lähnemann, J., Riechert, H., Griffiths, I., Cherns, D., and Waag, A.: Continuous-flow MOVPE of Ga-polar GaN column arrays and core–shell LED Structures. Cryst. Growth Des. 13, 3475–3480 (2013).CrossRefGoogle Scholar
Jeon, E.S., Kozlov, V., Song, Y.K., Vertikov, A., Kuball, M., Nurmikko, A.V., Liu, H., Chen, C., Kern, R.S., Kuo, C.P., and Craford, M.G.: Recombination dynamics in InGaN quantum wells. Appl. Phys. Lett. 4194, 8–11 (2016).Google Scholar
Bai, J., Wang, T., and Sakai, S.: Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures. J. Appl. Phys. 88, 4729 (2000).Google Scholar
Morkoç, H.: Nitride Semiconductors and Devices (Springer, Berlin, Heidelberg, 1999).Google Scholar