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Room-temperature epitaxy of Cu on Si(111) using partially ionized beam deposition

Published online by Cambridge University Press:  31 January 2011

P. Bai ,
G-R. Yang ,
L. You ,
T-M. Lu  and
D.B. Knorr
P. Bai
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, New York 12180
G-R. Yang
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, New York 12180
L. You
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, New York 12180
T-M. Lu
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, New York 12180
D.B. Knorr
Affiliation:
Center for Integrated Electronics and Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
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Abstract

The epitaxial growth of Cu on Si(111) substrate at room temperature was achieved using the Partially Ionized Beam (PIB) deposition technique in a conventional (10−4 Pa) vacuum without prior in situ cleaning of the substrate or post-annealing of the film. The beam contained ≍2% of Cu self-ions, and a bias of 0 to 4.2 kV was applied to the substrate during deposition. X-ray diffraction studies showed the existence of a twin structure in the epitaxial Cu layer deposited at 1 kV. A mechanism of epitaxial growth of Cu(111) on Si(111) substrate via an η″—Cu3Si intermediate phase is proposed. Based on the crystal structure of η″—Cu3Si, it is demonstrated that the geometrical lattice matching concept provides a simple picture of lattice continuity at the interface in this epitaxial system.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 5 , May 1990 , pp. 989 - 997
Copyright
Copyright © Materials Research Society 1990

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