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Solid-phase reactions in Ir/(111)Si systems studied by means of x-ray emission spectroscopy

Published online by Cambridge University Press:  31 January 2011

E. Z. Kurmaev ,
V. R. Galakhov ,
S. N. Shamin ,
T. Rodríguez ,
A. Almendra ,
J. Sanz-Maudes ,
K. Göransson  and
I. Engström
E. Z. Kurmaev
Affiliation:
Institute of Metal Physics, Russian Academy of Science–Ural Division, 620219 Yekaterinburg GSP-170, Russia
V. R. Galakhov
Affiliation:
Institute of Metal Physics, Russian Academy of Science–Ural Division, 620219 Yekaterinburg GSP-170, Russia
S. N. Shamin
Affiliation:
Institute of Metal Physics, Russian Academy of Science–Ural Division, 620219 Yekaterinburg GSP-170, Russia
T. Rodríguez
Affiliation:
Dept. Tecnología Electrónica, ETSI Telecomunicación–Univ. Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain
A. Almendra
Affiliation:
Dept. Tecnología Electrónica, ETSI Telecomunicación–Univ. Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain
J. Sanz-Maudes
Affiliation:
Dept. Tecnología Electrónica, ETSI Telecomunicación–Univ. Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain
K. Göransson
Affiliation:
Institute of Chemistry, University of Uppsala, Box 531, S-751 21, Uppsala, Sweden
I. Engström
Affiliation:
Institute of Chemistry, University of Uppsala, Box 531, S-751 21, Uppsala, Sweden
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Extract

High energy resolved x-ray emission spectroscopy with variable electron beam excitation is applied for study of solid-phase reactions in the Ir/(111)Si system as a function of annealing temperature. The formation of Ir silicides as a function of depth is studied by measurements of Si L2,3 x-ray emission valence spectra at different electron excitation energies (3–10 keV), and the results are compared with those of Rutherford backscattering.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 7 , July 1998 , pp. 1950 - 1955
Copyright
Copyright © Materials Research Society 1998

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