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Spectroscopic investigation of disorder and crystallite formation in conductive films synthesized from aromatic polyimide

Published online by Cambridge University Press:  29 June 2016

D. Xu ,
X.L. Xu  and
S. C. Zou
D. Xu
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, 865 Changning Road, Shanghai 200050, Peoples'Republic of China
X.L. Xu
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, 865 Changning Road, Shanghai 200050, Peoples'Republic of China
S. C. Zou
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, 865 Changning Road, Shanghai 200050, Peoples'Republic of China
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Abstract

X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were employed to investigate the effects of the ion beam implantation upon the chemical bonding and the final microstructure in the irradiated polyimide layer. XPS results show an increase of graphite cells with irradiation dose until a threshold is reached. A decomposing approach of data analysis for the experimental Raman spectra further discloses that the implantation parameters, i.e., dose, beam current density, and target temperature, play important but different roles in the formation of the final structure. By the current spectroscopic investigation, a deeper insight has been achieved into the origin of the enhanced conductivity, which shows the conductivity of modified layers are partly, even mainly, determined by their inner established order. This conclusion may serve as a guide in conductive polymer preparations.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 1 , January 1992 , pp. 229 - 234
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1.Giedd, R.E., Moss, M.G., Craig, M.M., and Robertson, D.E., Nucl. Instrum. Methods in Phys. Res. B 59/60, 1253 (1991).CrossRefGoogle Scholar
2.Biersack, J.P. and Kallweit, R., Nucl. Instrum. Methods in Phys. Res. B 46, 309 (1990).CrossRefGoogle Scholar
3.Xu, X.L., Zhou, Z.Y., Chen, L.Z., and Zou, S.C., in Beam-Solid Interactions: Physical Phenomena, edited by Knapp, J.A., Borgesen, P., and Zuhr, R. A. (Mater. Res. Soc. Symp. Proc. 157, Pittsburgh, PA, 1990).Google Scholar
4.Okata, T., Nishijma, S., Takahata, K., and Katagiri, K., Nucl. Instrum. Methods in Phys. Res. B 37/38, 720 (1989).CrossRefGoogle Scholar
5.Davenas, J., Xu, X.L., Boiteux, G., and Sage, D., Nucl. Instrum. Methods in Phys. Res. B 39, 754 (1989).CrossRefGoogle Scholar
6.Takahashi, K. and Iwaki, M., Proc. 3rd Sino-Japan Symposium on Ion Surface Optimization of Materials, Shanghai, China, 10 1990.Google Scholar
7.Dillon, R.O. and Woollam, John A., Phys. Rev. B 29, 3482 (1984).CrossRefGoogle Scholar
8.Knight, D.S. and White, W.B., J. Mater. Res. 4, 385 (1989).CrossRefGoogle Scholar
9.Di Domenico, M. Jr., Wemple, S.H., and Porto, P.S., Phys. Rev. 174, 522 (1968).CrossRefGoogle Scholar
10.Lespade, P., Marchand, A., Couzi, M., and Cruege, F., Carbon 22, 375 (1984).CrossRefGoogle Scholar
11.Beeman, D., Anderson, M.R., Silverman, J., and Lynds, R., unpublished research.Google Scholar
12.Wasserman, B., Braunstein, G., Dresselhaus, M.S., and Wnek, G.E., in Ion Implantation and Ion Beam Processing of Materials, edited by Hubler, G.K., Holland, O.W., Clayton, C.R., and White, C. W. (Mater. Res. Soc. Symp. Proc. 27, North-Holland, Amsterdam, 1983), p. 423.Google Scholar