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Structural, optical, and electronic properties of room temperature ferromagnetic GaCuN film grown by hybrid physical-chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Chul Hwan Choi ,
Seon Hyo Kim ,
Hyo Jin Lee ,
Yoon Hee Jeong  and
Myung Hwa Jung
Chul Hwan Choi*
Affiliation:
Materials Science and Engineering Department, POSTECH, Pohang, Gyungbuk 790-784, Republic of Korea
Seon Hyo Kim
Affiliation:
Materials Science and Engineering Department, POSTECH, Pohang, Gyungbuk 790-784, Republic of Korea
Yoon Hee Jeong
Affiliation:
Department of Physics, POSTECH, Pohang, Gyungbuk 790-784, Republic of Korea
Myung Hwa Jung
Affiliation:
Department of Physics, Sogang University, Seoul, 100-611, Republic of Korea
*
a) Address all correspondence to this author. e-mail: jojo74@postech.ac.kr
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Abstract

Ferromagnetic Cu-doped GaN film was grown on a GaN-buffered sapphire (0001) substrate by a hybrid physical-chemical-vapor-deposition method (HPCVD). The GaCuN film (Cu: 3.6 at.%) has a highly c-axis-oriented hexagonal wurtzite crystal structure, which is similar to GaN buffer but without any secondary phases such as metallic Cu, CuxNy, and CuxGay compounds. Two weak near-band edge (NBE) emissions at 3.38 eV and donor-acceptor-pair (DAP) transition at 3.2 eV with a typical strong broad yellow emission were observed in photoluminescence spectra for GaN buffer. In contrast, the yellow emission was completely quenched in GaCuN film because Ga vacancies causing the observed yellow emission in undoped GaN were substituted by Cu atoms. In addition, GaCuN film exhibits a blue shift of NBE emission, which could be explained with the +2 oxidation state of Cu ions, replacing +3 Ga ions resulting in band gap increment. The valance sate of Cu in GaCuN film was also confirmed by x-ray photoelectron spectroscopy (XPS) analysis. The GaCuN film shows ferromagnetic ordering and possesses a residual magnetization of 0.12 emu/cm3 and a coercive field of 264 Oe at room temperature. The unpaired spins in Cu2+ ions (d9) are most likely to be responsible for the observed ferromagnetism in GaCuN.

Keywords

Chemical vapor deposition (CVD) (deposition)III-VSpintronic
Type
Articles
Information
Journal of Materials Research , Volume 24 , Issue 5 , May 2009 , pp. 1716 - 1721
Copyright
Copyright © Materials Research Society 2009

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