Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T18:14:15.130Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Expansion of Low-pressure Chemical Vapor Deposition Polysilicon Films

Published online by Cambridge University Press:  31 January 2011

H. Kahn ,
R. Ballarini  and
A. H. Heuer
H. Kahn
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106
R. Ballarini
Affiliation:
Department of Civil Engineering, Case Western Reserve University, Cleveland, Ohio 44106
A. H. Heuer
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106
Get access

Abstract

Polysilicon films were deposited using low-pressure chemical vapor deposition (LPCVD) onto oxidized silicon substrates, after which substrate curvature as a function of temperature was measured. The curvatures changed with temperature, implying that the thermal expansion of LPCVD polysilicon differs from that of the single crystal silicon substrate. Further, polysilicon films with tensile residual stresses displayed an increased thermal expansion, while polysilicon films with compressive residual stresses displayed a decreased thermal expansion. Following high temperature annealing, the residual stresses of the polysilicon films were reduced to near zero, and the thermal expansion of the polysilicon films matched that of the single crystal substrate. The apparent change in thermal expansion coefficient due to residual stress was much larger than predicted theoretically.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 7 , July 2002 , pp. 1855 - 1862
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Yang, J., Kahn, H., He, A.Q., Phillips, S.M., and Heuer, A.H., J. Microelectromech. Syst. 9, 485 (2000).CrossRefGoogle Scholar
Kahn, H., He, A.Q., and Heuer, A.H., Philos. Mag. A 82, 137 (2002).CrossRefGoogle Scholar
Stoney, G.G., Proc. R. Soc. London A82, 172 (1909).Google Scholar
Brantley, W.A., J. Appl. Phys. 44, 534 (1973).CrossRefGoogle Scholar
Herrero, C.P., J. Mater. Res. 16, 2505 (2001).CrossRefGoogle Scholar
Jayaraman, S., Edwards, R.L., and Hemker, K.J., J. Mater. Res. 14, 688 (1999).CrossRefGoogle Scholar
Glazov, V.M. and Pashinkin, A.S., High Temperature 39, 413 (2001).CrossRefGoogle Scholar
Ashcroft, N.W. and Mermin, N.D., Solid State Physics (Saunders College Press, Philadelphia, PA, 1976), p. 493.Google Scholar
Ibach, H., Phys. Status Solidi 31, 625 (1969).CrossRefGoogle Scholar
Wei, S., Li, C., and Chou, M.Y., Phys. Rev. B 50, 14587 (1994).CrossRefGoogle Scholar
Handbook of Physical Quantities, edited by Grigoriev, I.S. and Meilikhov, E.Z. (CRC Press, New York, 1997), p. 100.Google Scholar
Ballarini, R., Mullen, R.L., Yin, Y., Kahn, H., Stemmer, S., and Heuer, A.H., J. Mater. Res. 12, 915 (1997).CrossRefGoogle Scholar
Yu, C-L., Flinn, P.A., Lee, S-H., and Bravman, J.C., in Thin Films— Structure and Morphology, edited by Moss, S.C., Ila, D., Cammarata, R.C., Chason, C.H., Einstein, T.L., and Williams, E.D. (Mater. Res. Soc. Symp. Proc. 441, Pittsburgh, PA, 1997), p. 403.Google Scholar
Sharpe, W.N., Vaidyanathan, K.R., Yuan, B., and Edwards, R.L., in Materials for Mechanical and Optical Microsystems, edited by Reed, M.L., Elwenspoek, M.Johansson, S., Obermeier, E., Fujita, H., and Uenishi, Y. (Mater. Res. Soc. Symp. Proc. 444, Pittsburgh, PA, 1997), p. 185.Google Scholar