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Thermoelectric properties of CaMnO3 films obtained by soft chemistry synthesis

Published online by Cambridge University Press:  14 March 2012

Dimas S. Alfaruq
Affiliation:
Solid State Chemistry and Catalysis, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Duebendorf, Switzerland
Eugenio H. Otal
Affiliation:
Solid State Chemistry and Catalysis, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Duebendorf, Switzerland
Myriam H. Aguirre
Affiliation:
Solid State Chemistry and Catalysis, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Duebendorf, Switzerland
Sascha Populoh
Affiliation:
Solid State Chemistry and Catalysis, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Duebendorf, Switzerland
Anke Weidenkaff*
Affiliation:
Solid State Chemistry and Catalysis, Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Duebendorf, Switzerland
*
a)Address all correspondence to this author. e-mail: anke.weidenkaff@empa.ch
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Abstract

Polycrystalline randomly oriented CaMnO3 films were successfully deposited on sapphire substrates by soft chemistry methods. The precursor solutions were obtained from a mixture of metal acetates dissolved in acids. The Seebeck coefficient and the electrical resistivity were measured in the temperature range of 300 K < T < 1000 K. Modifications of thermal annealing procedures during the deposition of precursor layers resulted in different power factor values. Thermal annealing of CaMnO3 films at 900 °C for 48 h after four-layer depositions (route A) resulted in a pure perovskite phase with higher power factor and electrical resistivity than four-layer depositions of films annealed layer by layer at 900 °C for 48 h (route B). The studied films have negative Seebeck coefficients indicative of n-type conduction and electrical resistivities showing semiconducting behavior.

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Articles
Copyright
Copyright © Materials Research Society 2012

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