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X-ray structural studies of epitaxial yttrium silicide on Si(111)

Published online by Cambridge University Press:  03 March 2011

L.J. Martínez-Miranda ,
J.J. Santiago-Avilés ,
W.R. Graham ,
P.A. Heiney  and
M.P. Siegal
L.J. Martínez-Miranda
Affiliation:
Department of Electrical Engineering and Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104
J.J. Santiago-Avilés
Affiliation:
Department of Electrical Engineering and Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104
W.R. Graham
Affiliation:
Department of Electrical Engineering and Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104
P.A. Heiney
Affiliation:
Department of Physics, University of Pennsylvania, Philadelphia, Pennsylvania 19104
M.P. Siegal
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico 87185
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Abstract

We performed a series of glancing angle and reflection x-ray diffraction experiments to study both the in-plane and out-of-plane structure of epitaxial YSi2−x films grown on Si(111), with thicknesses ranging from 85 Å to 510 Å. These measurements allowed us to characterize the mean film lattice constants, the position correlation lengths of the film, and the presence and extent of strain as a function of film thickness. We find that the strain along the basal plane increases as a function of increasing thickness to approximately 1% in the 510 Å film; the corresponding out-of-plane strain is such that the film unit cell volume increases as a function of thickness. The corresponding in-plane microscopic strain varies from 0.5% for the 85 Å film to 0.3% for the 510 Å film. We relate our results to the mode of film growth and the presence of pinholes in the films.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 6 , June 1994 , pp. 1434 - 1440
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1Segmüller, A., Thin Solid Films 154, 33 (1987).CrossRefGoogle Scholar
2Siegal, M. P., Kaatz, F. H., Graham, W. R., Santiago-Aviles, J.J., and Van der Spiegel, J., J. Appl. Phys. 66, 2999 (1989).CrossRefGoogle Scholar
3Knapp, J. A. and Picraux, S. T., Appl. Phys. 48, 466 (1987).Google Scholar
4Baglin, J. E. E., d'Heurle, F. M., and Petersson, C. S., J. Appl. Phys. 52, 2841 (1981).CrossRefGoogle Scholar
5Gurvitch, M., Levi, A. F. J., Tung, R. T., and Nakahara, S., Appl. Phys. Lett. 51, 311 (1987).CrossRefGoogle Scholar
6Kaatz, F. H., Ph.D. Thesis, University of Pennsylvania (1991).Google Scholar
7Kaatz, F. H., Van der Spiegel, J., and Graham, W. R., J. Appl. Phys. 69, 514 (1991).CrossRefGoogle Scholar
8Prutton, M., Surface Physics (Clarendon Press, Oxford, 1984).Google Scholar
9Siegal, M. P., Graham, W. R., and Santiago-Avilds, J. J., J. Appl. Phys. 68, 574 (1990).CrossRefGoogle Scholar
10Marra, W. C., Eisenberger, P., and Cho, A. Y., J. Appl. Phys. 50, 6927 (1979).CrossRefGoogle Scholar
11Warren, B. E., X-Ray Diffraction (Academic Press, San Diego, CA, 1969).Google Scholar
12Martínez-Miranda, L. J., Siegal, M. P., Heiney, P. A., Santiago-Aviles, J. J., and Graham, W.R., in Layered Structures—Heteroepitaxy, Superlattices, Strain, and Metastability, edited by Dodson, B. W., Schowalter, L. J., Cunningham, J. E., and Pollak, F. H. (Mater. Res. Soc. Symp. Proc. 160, Pittsburgh, PA, 1990), p. 287.Google Scholar
13Chen, L. J., Chen, F. R., and Lee, T. L., J. Appl. Phys. 71, 3307 (1992).Google Scholar
14Chopra, K. L., Thin Film Phenomena (McGraw-Hill, Inc., New York, 1969), p. 272.Google Scholar
15Siegal, M. F., Martínez-Miranda, L.J., Graham, W. R., Santiago-Avilés, J.J., and Siegal, M. P., J. Appl. Phys. 75, 1517 (1994).CrossRefGoogle Scholar
16Nicolet, M. A., oral presentation (1989).Google Scholar