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Creep of CdZnTe at high homologous temperatures

Published online by Cambridge University Press:  31 January 2011

T. E. Stevens ,
J. C. Moosbrugger  and
F. M. Carlson
T. E. Stevens
Affiliation:
Department of Mechanical and Aeronautical Engineering, Clarkson University, Potsdam, New York 13699–5725
J. C. Moosbrugger
Affiliation:
Department of Mechanical and Aeronautical Engineering, Clarkson University, Potsdam, New York 13699–5725
F. M. Carlson
Affiliation:
Department of Mechanical and Aeronautical Engineering, Clarkson University, Potsdam, New York 13699–5725
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Abstract

The creep behavior of single-crystal Zn-doped CdTe was examined in the small strain regime. Specimens from two different sources, with tensile axes [110] and [112], were deformed at 1073 and 1173 K. Strain rates were of order 10−6 to 10−7 s−1. A laser interferometer was constructed to measure the small sample displacement. Cadmium overpressure was used to inhibit sublimation of test specimens at elevated temperatures. Some tests showed a transition from secondary to tertiary creep at low levels of strain. An activation energy for steady-state creep was calculated as QC = 1.46 eV, and the creep exponent was found to be approximately n = 4.2. These results, coupled with reported activation energies for self-diffusion of Cd in Cd(Zn)Te, indicate a dislocation creep mechanism. Etch pit density was measured before and after deformation and approached a common level regardless of initial etch pit density.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 10 , October 1999 , pp. 3864 - 3869
Copyright
Copyright © Materials Research Society 1999

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