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Large area chemical vapor deposition growth of monolayer MoSe2 and its controlled sulfurization to MoS2

Published online by Cambridge University Press:  28 January 2016

Rudresh Ghosh*
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA
Joon-Seok Kim
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA
Anupam Roy
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA
Harry Chou
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA
Mary Vu
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA
Sanjay K. Banerjee
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA
Deji Akinwande
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA
*
a) Address all correspondence to this author. e-mail: rudresh@utexas.edu
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Abstract

Layered transition metal dichalcogenides which are part of the two dimensional materials family are experiencing rapidly growing interest owing to their diverse physical and optoelectronic properties. Large area controllable synthesis of these materials is required for transition from lab scale research to practical applications. In this work, we present a single step chemical vapor deposition process for large area monolayer growth of molybdenum selenide (MoSe2). We also demonstrate controllable thermal conversion from molybdenum selenide to molybdenum sulfide.

Type
Invited Articles
Copyright
Copyright © Materials Research Society 2016 

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References

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